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Btrieve
Known as:
Btrieve Technologies, Inc.
, BTI
, SoftCraft
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Btrieve is a transactional database (navigational database) software product. It is based on Indexed Sequential Access Method (ISAM), which is a way…
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Related topics
Related topics
33 relations
Application programming interface
Architecture of Btrieve
Concurrency (computer science)
DOS
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Bertelsmann Stiftung Transformation Index (BTI) 2016 — Laos Country Report
Bertelsmann Stifung
2016
Corpus ID: 168965019
2015
2015
Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS
A. Veloso
,
G. Hellings
,
+18 authors
A. Thean
Symposium on VLSI Technology
2015
Corpus ID: 30259424
We report a comprehensive evaluation of different device architectures from a device and circuit performance viewpoint: gate-all…
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2015
2015
Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences
Y. Illarionov
,
A. Smith
,
+4 authors
T. Grasser
IEEE Transactions on Electron Devices
2015
Corpus ID: 24013712
We present a detailed analysis of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs) and compare those…
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2014
2014
Atomistic Pseudo-Transient BTI Simulation With Inherent Workload Memory
D. Rodopoulos
,
P. Weckx
,
Michail Noltsis
,
F. Catthoor
,
D. Soudris
IEEE transactions on device and materials…
2014
Corpus ID: 34282592
Bias Temperature Instability (BTI) is a major concern for the reliability of decameter to nanometer devices. Older modeling…
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Highly Cited
2011
Highly Cited
2011
Atomistic approach to variability of bias-temperature instability in circuit simulations
B. Kaczer
,
S. Mahato
,
+8 authors
G. Groeseneken
IEEE International Reliability Physics Symposium
2011
Corpus ID: 20112795
A blueprint for an atomistic approach to introducing time-dependent variability into a circuit simulator in a realistic manner is…
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Highly Cited
2009
Highly Cited
2009
Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization
L. Ragnarsson
,
Zilan Li
,
+10 authors
T. Hoffmann
International Electron Devices Meeting
2009
Corpus ID: 30793094
A novel gate first integration approach enabling ultra low-EOT is demonstrated. HfO<sub>2</sub> based devices with a zero…
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2008
2008
Cry2A toxins from Bacillus thuringiensis expressed in insect cells are toxic to two lepidopteran insects
G. M. S. Lima
,
R. S. Aguiar
,
+7 authors
B. Ribeiro
2008
Corpus ID: 84774452
The cry2Aa and cry2Ab genes from a Brazilian Bacillus thuringiensis strain were introduced into the genome of the baculovirus…
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2008
2008
A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel GaAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
H. Chin
,
Ming Zhu
,
+9 authors
Y. Yeo
IEEE International Electron Devices Meeting
2008
Corpus ID: 30406605
We report a novel surface passivation technology employing a silane-ammonia gas mixture to realize very high quality high-k gate…
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Review
2007
Review
2007
Hydrogen-Related Instabilities in MOS Devices Under Bias Temperature Stress
L. Tsetseris
,
X.J. Zhou
,
D. Fleetwood
,
peixiong zhao
,
S. Pantelides
IEEE transactions on device and materials…
2007
Corpus ID: 35995996
Hydrogen plays a central role in several reliability-related phenomena in electronic devices. Here, we review an extensive set of…
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1965
1965
Bulk Processing in Distributed Logic Memory
B. A. Crane
,
J. Githens
IEEE Transactions on Electronic Computers
1965
Corpus ID: 26834085
Use of a content-addressable memory as a highly parallel digital computer is described. The ability to perform any arithmetic…
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