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Btrieve
Known as:
Btrieve Technologies, Inc.
, BTI
, SoftCraft
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Btrieve is a transactional database (navigational database) software product. It is based on Indexed Sequential Access Method (ISAM), which is a way…
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Related topics
Related topics
33 relations
Application programming interface
Architecture of Btrieve
Concurrency (computer science)
DOS
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2018
Highly Cited
2018
Comphy - A compact-physics framework for unified modeling of BTI
G. Rzepa
,
J. Franco
,
+11 authors
T. Grasser
Microelectronics and reliability
2018
Corpus ID: 44182437
Highly Cited
2013
Highly Cited
2013
Intrinsic transistor reliability improvements from 22nm tri-gate technology
S. Ramey
,
A. Ashutosh
,
+8 authors
C. Wiegand
IEEE International Reliability Physics Symposium
2013
Corpus ID: 22165576
This paper highlights the intrinsic reliability capabilities of Intel's 22nm process technology, which introduced the tri-gate…
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Highly Cited
2011
Highly Cited
2011
From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation
M. Toledano-Luque
,
B. Kaczer
,
+4 authors
Guido Groeseneken
Symposium on VLSI Technology
2011
Corpus ID: 13243160
Based on detailed understanding of behavior and statistics of individual defects, we have presented a new methodology to predict…
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Review
2011
Review
2011
Wind turbine noise mechanisms and some concepts for its control
C. Doolan
,
D. Moreau
,
Laura A. Brooks
2011
Corpus ID: 73586636
INTRODUCTION Climate change policies have forced governments around the world to mandate large increases in wind power…
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Highly Cited
2011
Highly Cited
2011
Statistical Model for MOSFET Bias Temperature Instability Component Due to Charge Trapping
Gilson I. Wirth
,
Roberto da Silva
,
B. Kaczer
IEEE Transactions on Electron Devices
2011
Corpus ID: 9042811
Bias temperature instability (BTI) is a serious reliability concern for MOS transistors. This paper covers theoretical analysis…
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Highly Cited
2009
Highly Cited
2009
An All-In-One Silicon Odometer for Separately Monitoring HCI, BTI, and TDDB
J. Keane
,
Xiaofei Wang
,
D. Persaud
,
C. Kim
IEEE Journal of Solid-State Circuits
2009
Corpus ID: 6937794
We present an on-chip reliability monitor capable of separating the aging effects of hot carrier injection (HCI), bias…
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Review
2009
Review
2009
Unpacking the Rule of Law: A Review of Judicial Independence Measures
Julio Rios-Figueroa
,
Jeffrey K. Staton
2009
Corpus ID: 8092368
The rule of law has become a favored solution to crucial substantive problems in the social sciences. Measures of the concept…
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Highly Cited
2004
Highly Cited
2004
Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs
S. Mahapatra
,
P.B. Kumar
,
M. A. Alam
IEEE Transactions on Electron Devices
2004
Corpus ID: 22007183
Negative bias temperature instability is studied in thick and thin gate oxide p-MOSFETs. The relative contributions of interface…
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Highly Cited
2004
Highly Cited
2004
Physical model of BTI, TDDB and SILC in HfO/sub 2/-based high-k gate dielectrics
K. Torii
,
H. Kitajima
,
+6 authors
K. Yamada
IEDM Technical Digest. IEEE International…
2004
Corpus ID: 21245328
The microscopic mechanism of the degradation occurring in HfO/sub 2/-based high-k/IL dual layer gate insulator has been…
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Highly Cited
1999
Highly Cited
1999
The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling
N. Kimizuka
,
T. Yamamoto
,
T. Mogami
,
K. Yamaguchi
,
K. Imai
,
T. Horiuchi
Symposium on VLSI Technology. Digest of Technical…
1999
Corpus ID: 33495246
This paper presents a new reliability scaling scenario for CMOS devices with direct-tunneling ultra-thin gate oxide. Device…
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