Non-Monte-Carlo methodology for high-sigma simulations of circuits under workload-dependent BTI degradation—Application to 6T SRAM

@article{Weckx2014NonMonteCarloMF,
  title={Non-Monte-Carlo methodology for high-sigma simulations of circuits under workload-dependent BTI degradation—Application to 6T SRAM},
  author={Pieter Weckx and Ben Kaczer and Halil Kukner and Julien Roussel and Praveen Raghavan and Francky Catthoor and Guido Groeseneken},
  journal={2014 IEEE International Reliability Physics Symposium},
  year={2014},
  pages={5D.2.1-5D.2.6}
}
Recent advances in understanding Bias Temperature Instability (BTI) in terms of individual gate oxide defects has created a paradigm shift towards describing degradation in terms of time-dependent variability. This added time dimension to the variability analysis has proven to be a considerable design challenge. Moreover, the non-normally distributed ΔVTH shifts create compatibility issues with the current SotA statistical assessments techniques for evaluating high sigma yield of SRAM cells… CONTINUE READING
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