• DOI:10.1063/1.1664012
• Corpus ID: 99600508

Sensitivity of Pt/ZnO schottky diode characteristics to hydrogen

@inproceedings{Kim2004SensitivityOP,
  title={Sensitivity of Pt/ZnO schottky diode characteristics to hydrogen},
  author={S. Kim and Byoung Sam Kang and Fan Ren and Kelly P. Ip and Young Woo Heo and David P. Norton and Stephen J. Pearton},
  year={2004},
  url={https://api.semanticscholar.org/CorpusID:99600508}
}

• S. Kim, B. S. Kang, +4 authors S. Pearton
• Published 2 March 2004
• Materials Science, Physics

Pt/ ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H 2 is introduced into a N 2 ambient at 25°C.The rectifying current-voltage(I-V) characteristic shows a non-reversible collapse to Ohmic behavior when as little as 50 ppm of H 2 is present in the N 2 ambient. At higher temperatures, the recovery is thermally activated with an activation energy of ∼0.25 eV. This… 

Pt/ ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H 2 is introduced into a N 2 ambient at 25°C.The rectifying current-voltage(I-V) characteristic shows a non-reversible collapse to Ohmic behavior when as little as 50 ppm of H 2 is present in the N 2 ambient. At higher temperatures, the recovery is thermally activated with an activation energy of ∼0.25 eV. This suggests that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes.