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Temperature-dependent capacitance studies of palladium/zinc oxide Schottky diodes
Abstract Palladium Schottky contacts were prepared on ZnO films that were deposited by MOCVD on GaAs substrates. We characterize the Schottky contacts by means of current–voltage measurements atExpand
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Oxygen passivation and reactivation of interface states introduced during Schottky diode fabrication on bulk n-type 6H–SiC
Abstract Typical and deviant Au or Au–Ge Schottky diodes fabricated via thermal (resistive) metallization on bulk 6H–SiC are boiled in 17.8 M Ω deionized water. Boiling of the typical devices (shownExpand
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Determination of the effect of different blade speeds and mixing times on the homogeneity of mixtures containing different ratios of two powders
DETERMINATION OF THE EFFECT OF DIFFERENT BLADE SPEEDS AND MIXING TIMES ON THE HOMOGENEITY OF MIXTURES CONTAINING DIFFERENT RATIOS OF TWO POWDERS Aim The first step in a wet granulation process is dryExpand
Establishing the cause of poor device quality in Schottky barrier diodes fabricated on bulk n-type 6H-SiC
Conventional room temperature electrical evaluatory measurements conducted on Schottky barrier diodes fabricated on bulk n-type 6H-SiC reveal poor ideality values (degrading with time), an absence ofExpand
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Defect introduction during E-beam metal deposition on bulk n-type 6H–SiC
Deep level transient spectroscopy is employed in order to assess whether E-beam metal deposition on bulk n-type 6H–SiC effects any changes to the underlying material. Near-surface E-beam-relatedExpand
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