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Long-term monitoring of photovoltaic devices
For photovoltaic (PV) devices to operate successfully over an expected lifespan of 30 years, much research is needed in all aspects of these devices. This study is concerned with the monitoring ofExpand
Raman Spectroscopy of Hydrogen Molecules in Crystalline Silicon
We report on a Raman spectroscopy study of float-zone crystalline silicon after exposure to a hydrogen plasma. New lines measured at 3601 and $2622\mathrm{cm}{}^{\ensuremath{-}1}$ are attributed toExpand
Investigation on the I-V characteristics of a high concentration, photovoltaic array
The aim of this study was to highlight the effects on the I-V characteristics of concentrator arrays due to mismatch between series-connected high concentration PV modules and between single junctionExpand
Single-End Measurement of Root Mean Square Differential Group Delay in Single-Mode Fibers by Polarization Optical Time-Domain Reflectometry
We present a novel technique, based on polarization-sensitive reflectometry, able to perform single-end measurements of the root mean square differential group delay of single-mode fibers. TheExpand
Photoluminescence properties of metalorganic vapor phase epitaxial Zn3As2
The photoluminescence (PL) properties of the II3V2 compound semiconductor Zn3As2, grown by metalorganic vapor phase epitaxy, is investigated in the temperature range of 4.2–350 K. Several lines areExpand
A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs
The electron and hole traps occurring in melt‐grown undoped n‐type GaAs have been studied using deep level transient spectroscopy. Several electron traps with energies ranging from 0.81 to 0.14 eVExpand
Influence of VI:II ratio on the properties of MOCVD‐grown ZnO thin films
We report on the impact the MOCVD VI:II ratio during growth has on the properties of ZnO thin films grown on glass slides using diethyl zinc (DEZ) and tert-butanol (TBOH) as precursors. Our workExpand
Formation of surface states during Schottky barrier fabrication on Al-doped p-type 6H–SiC
Abstract I – V measurements of an as-deposited Ru Schottky barrier diode (SBD) revealed a shift of −0.6 V in the minimum current. This shift is attributed to the presence of localized interfaceExpand
Influence of metal organic chemical vapor deposition growth parameters on the luminescent properties of ZnO thin films deposited on glass substrates
Highly c-axis oriented zinc oxide (ZnO) thin films with a wurtzite structure have been grown on glass substrates by metal organic chemical vapor deposition. The influence of growth parameters on theExpand