Author pages are created from data sourced from our academic publisher partnerships and public sources.
- Publications
- Influence
Share This Author
Raman Spectroscopy of Hydrogen Molecules in Crystalline Silicon
We report on a Raman spectroscopy study of float-zone crystalline silicon after exposure to a hydrogen plasma. New lines measured at 3601 and $2622\mathrm{cm}{}^{\ensuremath{-}1}$ are attributed to…
Long-term monitoring of photovoltaic devices
- E. V. Dyk, E. Meyer, F. Vorster, A. Leitch
- Engineering
- 1 February 2002
Characterization of secondary phases formed during MOVPE growth of InSbBi mixed crystals
- M. Wagener, J. R. Botha, A. Leitch
- Materials Science
- 2 May 2000
Investigation on the I-V characteristics of a high concentration, photovoltaic array
- F. Vorster, E. Van Dyk, A. Leitch
- EngineeringConference Record of the Twenty-Ninth IEEE…
- 19 May 2002
The aim of this study was to highlight the effects on the I-V characteristics of concentrator arrays due to mismatch between series-connected high concentration PV modules and between single junction…
Photoluminescence properties of metalorganic vapor phase epitaxial Zn3As2
- J. R. Botha, G. Scriven, J. Engelbrecht, A. Leitch
- Materials Science
- 1 November 1999
The photoluminescence (PL) properties of the II3V2 compound semiconductor Zn3As2, grown by metalorganic vapor phase epitaxy, is investigated in the temperature range of 4.2–350 K. Several lines are…
Influence of VI:II ratio on the properties of MOCVD‐grown ZnO thin films
We report on the impact the MOCVD VI:II ratio during growth has on the properties of ZnO thin films grown on glass slides using diethyl zinc (DEZ) and tert-butanol (TBOH) as precursors. Our work…
A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs
- F. D. Auret, A. Leitch, J. Vermaak
- Materials Science
- 1986
The electron and hole traps occurring in melt‐grown undoped n‐type GaAs have been studied using deep level transient spectroscopy. Several electron traps with energies ranging from 0.81 to 0.14 eV…
Characterization of GaAs and AlGaAs by the Hall effect
- A. Leitch, D. Raubenheimer, S. A. Goodman, J. Vermaak
- Physics
- 1 April 1991
Influence of metal organic chemical vapor deposition growth parameters on the luminescent properties of ZnO thin films deposited on glass substrates
- K. Roro, J. Dangbegnon, S. Sivaraya, A. Leitch, J. R. Botha
- Materials Science, Physics
- 13 March 2008
Highly c-axis oriented zinc oxide (ZnO) thin films with a wurtzite structure have been grown on glass substrates by metal organic chemical vapor deposition. The influence of growth parameters on the…
...
...