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Raman Spectroscopy of Hydrogen Molecules in Crystalline Silicon
We report on a Raman spectroscopy study of float-zone crystalline silicon after exposure to a hydrogen plasma. New lines measured at 3601 and $2622\mathrm{cm}{}^{\ensuremath{-}1}$ are attributed to
Investigation on the I-V characteristics of a high concentration, photovoltaic array
The aim of this study was to highlight the effects on the I-V characteristics of concentrator arrays due to mismatch between series-connected high concentration PV modules and between single junction
Photoluminescence properties of metalorganic vapor phase epitaxial Zn3As2
The photoluminescence (PL) properties of the II3V2 compound semiconductor Zn3As2, grown by metalorganic vapor phase epitaxy, is investigated in the temperature range of 4.2–350 K. Several lines are
Influence of VI:II ratio on the properties of MOCVD‐grown ZnO thin films
We report on the impact the MOCVD VI:II ratio during growth has on the properties of ZnO thin films grown on glass slides using diethyl zinc (DEZ) and tert-butanol (TBOH) as precursors. Our work
A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs
The electron and hole traps occurring in melt‐grown undoped n‐type GaAs have been studied using deep level transient spectroscopy. Several electron traps with energies ranging from 0.81 to 0.14 eV
Influence of metal organic chemical vapor deposition growth parameters on the luminescent properties of ZnO thin films deposited on glass substrates
Highly c-axis oriented zinc oxide (ZnO) thin films with a wurtzite structure have been grown on glass substrates by metal organic chemical vapor deposition. The influence of growth parameters on the