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v-mos Genes
Known as:
v-mos Gene
, v mos
, Gene, v-mos
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National Institutes of Health
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2 relations
Broader (2)
Oncogenes
mos Genes
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Al2O3-Dielectric InAlN/AlN/GaN ${\Gamma}$ -Gate MOS-HFETs With Composite Al2O3/TiO2 Passivation Oxides
Ching-Sung Lee
,
Xue-Cheng Yao
,
Yi-Ping Huang
,
W. Hsu
IEEE Journal of the Electron Devices Society
2018
Corpus ID: 52916758
Novel Al<sub>2</sub>O<sub>3</sub>-dielectric InAlN/AlN/GaN <inline-formula> <tex-math notation="LaTeX">${\Gamma }$ </tex-math…
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2015
2015
A Comprehensive Study on the Frequency-Dependent Electrical Characteristics of Sm2O3 MOS Capacitors
Ş. Kaya
,
E. Yılmaz
IEEE Transactions on Electron Devices
2015
Corpus ID: 36470566
In this paper, we report comprehensive frequency-dependent electrical characterizations of samarium oxide (Sm2O3) MOS capacitors…
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2013
2013
Quality assessment of VoIP services: A proposal based on the measurement of the IP Packet Delay Variation
L. Angrisani
,
D. Capriglione
,
L. Ferrigno
,
G. Miele
IEEE International Workshop on Measurement and…
2013
Corpus ID: 16394886
Generally, the voice quality of a VoIP call can be analyzed through the measurement of suitable metrics at the application layer…
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2011
2011
Effect of channel width on ESD characteristics of SOI MOS device
Yujuan He
,
Y. En
,
Hongwei Luo
,
Qingzhong Xiao
International Conference on Quality, Reliability…
2011
Corpus ID: 27087201
The ESD characteristic of gate grounded NMOS device with different channel width was studied. It was indicated that the effect of…
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2011
2011
Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors
Ya-Lan Chiou
,
Ching-Ting Lee
IEEE Transactions on Electron Devices
2011
Corpus ID: 27469724
The intrinsic ZnO (i-ZnO) film deposited by a vapor cooling condensation system was used as the gate dielectric layer of the…
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2010
2010
Effect of Gate Length on ESD Characteristics of SOI MOS Device
Xia Qingzhong
2010
Corpus ID: 112153836
TLP test was used to study the ESD characteristics of gate grouded NMOS device with different gate lengths. It was indicated that…
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1998
1998
UHC MOS-FET パワーアンプ : UHC MOS-FETパワーアンプの開発
金田 明彦
1998
Corpus ID: 59730471
1994
1994
SECSPICE : Submicron Mos 설계를 위한 정확하고 효율적인 회로 시뮬레이터 ( SECSPICE : An Accurate and Efficient Circuit Simulator for Submicron MOS Designs )
김영길
,
이재훈
,
박진규
,
김경화
,
김경호
1994
Corpus ID: 110542905
1991
1991
Power MOS FETにおける電圧スクリーニング法の検討
鈴木一彦
,
瀬戸屋孝
1991
Corpus ID: 187810038
1982
1982
A 55ns 64K dynamic MOS RAM with tripple diffused MOS transistor
Y. Nagayama
,
Y. Ohbayashi
,
M. Taniguchi
,
T. Yoshihara
,
T. Nakano
International Electron Devices Meeting
1982
Corpus ID: 36342733
To obtain the higher performance dynamic MOS RAM, there exist three key parameters for device technologies. The higher…
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