Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 222,831,519 papers from all fields of science
Search
Sign In
Create Free Account
styrene oxide isomerase activity
Known as:
SOI activity
, styrene-oxide isomerase (epoxide-cleaving)
, styrene-oxide isomerase activity
Catalysis of the reaction: styrene oxide = phenylacetaldehyde. [EC:5.3.99.7, RHEA:21607]
National Institutes of Health
Create Alert
Alert
Related topics
Related topics
1 relation
styrene oxide isomerase
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2012
Highly Cited
2012
Spatial Composition Grading of Binary Metal Alloy Gate Electrode for Short-Channel SOI/SON MOSFET Application
B. Manna
,
S. Sarkhel
,
N. Islam
,
Sreyash Sarkar
,
S. K. Sarkar
IEEE Transactions on Electron Devices
2012
Corpus ID: 26954986
An overall performance comparison analysis based on 2-D Poisson's equation solution has been presented here both for silicon-on…
Expand
Highly Cited
2012
Highly Cited
2012
A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution
A. Aminbeidokhti
,
A. Orouji
,
Soude Rahmaninezhad
,
M. Ghasemian
IEEE Transactions on Electron Devices
2012
Corpus ID: 21425496
In this paper, a novel silicon-on-insulator (SOI) metal-semiconductor field-effect transistor (MESFET) with modified charge…
Expand
2008
2008
Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs
T. Irisawa
,
T. Numata
,
T. Tezuka
,
K. Usuda
,
N. Sugiyama
,
S. Takagi
IEEE Transactions on Electron Devices
2008
Corpus ID: 27821685
We propose effective subband engineering for electron mobility enhancement on a (110) surface, utilizing uniaxial tensile strain…
Expand
2008
2008
Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs
M. Zhang
,
J. Knoch
,
Shi-Li Zhang
,
S. Feste
,
M. Schroter
,
S. Mantl
IEEE Transactions on Electron Devices
2008
Corpus ID: 40856612
The inhomogeneity of Schottky-barrier (SB) height Phi<sub>B</sub> is found to strongly affect the threshold voltage V<sub>th</sub…
Expand
2007
2007
Rashba quantum wire: exact solution and ballistic transport
C. A. Perroni
,
D. Bercioux
,
V. M. Ramaglia
,
V. Cataudella
Journal of Physics: Condensed Matter
2007
Corpus ID: 8031741
The effect of Rashba spin–orbit interaction in quantum wires with hard-wall boundaries is discussed. The exact wavefunction and…
Expand
Highly Cited
2005
Highly Cited
2005
Control of threshold-voltage and short-channel effects in ultrathin strained-SOI CMOS devices
T. Numata
,
T. Mizuno
,
T. Tezuka
,
J. Koga
,
S. Takagi
IEEE Transactions on Electron Devices
2005
Corpus ID: 32606767
This paper presents a quantitative study on the device design for the control of threshold-voltage and the suppression of short…
Expand
2003
2003
Laterally actuated torsional micromirrors for large static deflection
V. Milanovic
,
M. Last
,
K. Pister
IEEE Photonics Technology Letters
2003
Corpus ID: 15304282
We report on the implementation of laterally electrostatically actuated, torsionally suspended silicon-on-insulator (SOI…
Expand
Review
2000
Review
2000
Silicon-on-insulator: materials aspects and applications
A. Plößl
,
Gertrud Kräuter
2000
Corpus ID: 31204119
1992
1992
Use of noise thermometry to study the effects of self-heating in submicrometer SOI MOSFETs
R. Bunyan
,
M. Uren
,
J. Alderman
,
W. Eccleston
IEEE Electron Device Letters
1992
Corpus ID: 43283682
The authors report the direct measurement of the silicon island temperature in both long and submicrometer thin-film silicon-on…
Expand
1992
1992
Sub-quarter-micrometer CMOS on ultrathin (400 AA) SOI
N. Kistler
,
E. Ver Ploeg
,
J. Woo
,
J. Plummer
IEEE Electron Device Letters
1992
Corpus ID: 3217726
MOS transistors with effective channel lengths down to 0.2 mu m have been fabricated in fully depleted, ultrathin (400 AA…
Expand
By clicking accept or continuing to use the site, you agree to the terms outlined in our
Privacy Policy
(opens in a new tab)
,
Terms of Service
(opens in a new tab)
, and
Dataset License
(opens in a new tab)
ACCEPT & CONTINUE