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indium arsenide
Known as:
InAs
, Indium arsenide (InAs)
, indium monoarsenide
National Institutes of Health
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Related topics
Related topics
2 relations
Broader (2)
Arsenicals
Indium
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2011
2011
Experimental Determination of Quantum and Centroid Capacitance in Arsenide–Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect
A. Ali
,
H. Madan
,
+5 authors
S. Datta
IEEE Transactions on Electron Devices
2011
Corpus ID: 9691281
Experimental gate capacitance (<i>Cg</i>) versus gate voltage data for InAs<sub>0.8</sub>Sb<sub>0.2</sub> quantum-well MOSFET (QW…
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Highly Cited
2008
Highly Cited
2008
Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric
Ning Li
,
E. Harmon
,
+4 authors
P. Ye
2008
Corpus ID: 123246698
InAs is very attractive as a channel material for high-speed metal-oxide-semiconductor (MOS) field-effect transistors due to its…
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2002
2002
Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer
Eui-Tae Kim
,
Zhonghui Chen
,
A. Madhukar
2002
Corpus ID: 39173610
To further the objective of controlled manipulation of the electronic states in epitaxial island quantum dots (QDs), we introduce…
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Highly Cited
2001
Highly Cited
2001
Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells
Eui-Tae Kim
,
Zhonghui Chen
,
A. Madhukar
2001
Corpus ID: 121843294
We report on tailoring detection bands of InAs quantum-dot infrared photodetectors (QDIPs) using InxGa1−xAs strain-relieving…
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2001
2001
Strain-induced change of surface reconstructions for InAs(001)
C. Ratsch
2001
Corpus ID: 1137850
The effect of strain on the stability of different surface reconstructions on InAs ~001! is investigated with density-functional…
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1996
1996
Core level and valence-band studies of the (111)2 x 2 surfaces of InSb and InAs.
Olsson
,
Ilver
,
+4 authors
Håkansson
Physical Review B (Condensed Matter)
1996
Corpus ID: 9474132
The valence and core electronic surface states on the (111)2X2 surfaces of InSb and InAs have been studied by angle-resolved…
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1994
1994
Optical spectroscopic studies of InAs layer transformation on GaAs surfaces.
Ledentsov
,
Wang
,
+5 authors
Kop'ev
Physical Review B (Condensed Matter)
1994
Corpus ID: 1485375
The optical properties of InAs monolayer and submonolayer coverage formed in a GaAs matrix by molecular-beam epitaxy have been…
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1992
1992
Conservation of momentum, and its consequences, in interband resonant tunneling.
Méndez
,
Nocera
,
Wang
Physical Review B (Condensed Matter)
1992
Corpus ID: 31858503
We have observed a drastic change with temperature (300--4 K) in the line shape of the current-voltage characteristics of GaSb…
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1987
1987
GaSb-InAs-GaSb heterostructures studied under hydrostatic pressure.
Beerens
,
Grégoris
,
Portal
,
Méndez
,
Chang
,
Esaki
Physical Review B (Condensed Matter)
1987
Corpus ID: 40835884
1985
1985
Electron subbands and transport properties in inversion layers of InAs and InP.
Yamaguchi
Physical Review B (Condensed Matter)
1985
Corpus ID: 41693041