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indium arsenide
Known as:
InAs
, Indium arsenide (InAs)
, indium monoarsenide
National Institutes of Health
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Related topics
Related topics
2 relations
Broader (2)
Arsenicals
Indium
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2012
Highly Cited
2012
Colorful InAs nanowire arrays: from strong to weak absorption with geometrical tuning.
Phillip M. Wu
,
N. Anttu
,
H. Xu
,
L. Samuelson
,
M. Pistol
Nano letters (Print)
2012
Corpus ID: 343121
One-dimensional nanostructure arrays can show fascinatingly different, tunable optical response compared to bulk systems. Here we…
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Highly Cited
2008
Highly Cited
2008
Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric
Ning Li
,
E. Harmon
,
+4 authors
P. Ye
2008
Corpus ID: 123246698
InAs is very attractive as a channel material for high-speed metal-oxide-semiconductor (MOS) field-effect transistors due to its…
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Highly Cited
2007
Highly Cited
2007
640$\,\times\,$512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array
S. Gunapala
,
S. Bandara
,
+9 authors
C. A. Shott
IEEE Journal of Quantum Electronics
2007
Corpus ID: 16386862
Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long…
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Highly Cited
2007
Highly Cited
2007
Global Impacts Of Geogenic Arsenic: A Medical Geology Research Case
J. Centeno
,
C. Tseng
,
G. B. van der Voet
,
R. Finkelman
Ambio
2007
Corpus ID: 32263115
Arsenic (As) is a ubiquitous element, and it is the 20th mostabundant element in the Earth’s crust. Humans can be exposedto As…
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Highly Cited
2003
Highly Cited
2003
Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations
P. Kratzer
,
E. Penev
,
M. Scheffler
2003
Corpus ID: 73700625
Highly Cited
2001
Highly Cited
2001
Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells
Eui-Tae Kim
,
Zhonghui Chen
,
A. Madhukar
2001
Corpus ID: 121843294
We report on tailoring detection bands of InAs quantum-dot infrared photodetectors (QDIPs) using InxGa1−xAs strain-relieving…
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Highly Cited
2000
Highly Cited
2000
Surface reconstructions for InAs(001) studied with density-functional theory and STM
C. Ratsch
,
W. Barvosa-Carter
,
F. Grosse
,
J. Owen
,
J. Zinck
2000
Corpus ID: 46604824
The stability of different surface reconstructions on InAs~001! is investigated theoretically and experimentally. Density…
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1996
1996
Nonequilibrium phonon dynamics and electron distribution functions in InP and InAs.
Grann
,
Tsen
,
Ferry
Physical Review B (Condensed Matter)
1996
Corpus ID: 39146260
We have used subpicosecond laser pulses to study the generation of nonequilibrium LO phonons in both InP and InAs. These two…
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Highly Cited
1991
Highly Cited
1991
InAs quantum dots in a single-crystal GaAs matrix.
Brandt
,
Tapfer
,
+5 authors
Heberle
Physical Review B (Condensed Matter)
1991
Corpus ID: 9224335
We directly synthesize InAs microclusters embedded in a single-crystal GaAs matrix by molecular-beam epitaxy. Fractional…
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Highly Cited
1980
Highly Cited
1980
Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's
A. Cappy
,
B. Carnez
,
R. Fauquembergues
,
G. Salmer
,
E. Constant
IEEE Transactions on Electron Devices
1980
Corpus ID: 38817029
For very-short-gate FET's, the nonstationary electron dynamic effects greatly improve the device performance. By means of a…
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