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indium arsenide

Known as: InAs, Indium arsenide (InAs), indium monoarsenide 
National Institutes of Health

Papers overview

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Highly Cited
2012
Highly Cited
2012
One-dimensional nanostructure arrays can show fascinatingly different, tunable optical response compared to bulk systems. Here we… 
Highly Cited
2008
Highly Cited
2008
InAs is very attractive as a channel material for high-speed metal-oxide-semiconductor (MOS) field-effect transistors due to its… 
Highly Cited
2007
Highly Cited
2007
Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long… 
Highly Cited
2007
Highly Cited
2007
Arsenic (As) is a ubiquitous element, and it is the 20th mostabundant element in the Earth’s crust. Humans can be exposedto As… 
Highly Cited
2001
Highly Cited
2001
We report on tailoring detection bands of InAs quantum-dot infrared photodetectors (QDIPs) using InxGa1−xAs strain-relieving… 
Highly Cited
2000
Highly Cited
2000
The stability of different surface reconstructions on InAs~001! is investigated theoretically and experimentally. Density… 
1996
1996
  • GrannTsenFerry
  • 1996
  • Corpus ID: 39146260
We have used subpicosecond laser pulses to study the generation of nonequilibrium LO phonons in both InP and InAs. These two… 
Highly Cited
1991
Highly Cited
1991
We directly synthesize InAs microclusters embedded in a single-crystal GaAs matrix by molecular-beam epitaxy. Fractional… 
Highly Cited
1980
Highly Cited
1980
For very-short-gate FET's, the nonstationary electron dynamic effects greatly improve the device performance. By means of a…