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gallium arsenide

Known as: GaAs, gallium arsenide (GaAs) 
National Institutes of Health

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ArsenicalsGallium
gallium arsenate

Papers overview

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Highly Cited
1997
Highly Cited
1997
Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
We report on quantum dot (QD) lasers made of stacked InAs dots grown by metalorganic chemical vapor deposition. Successful growth… 
Highly Cited
1996
Highly Cited
1996
Nonuniversal Conductance Quantization in Quantum Wires.
We have measured the transport properties of high-quality quantum wires fabricated in GaAs-AlGaAs by using cleaved edge… 
Highly Cited
1991
Highly Cited
1991
Subpicosecond spin relaxation dynamics of excitons and free carriers in GaAs quantum wells.
We have obtained a coherent undrestanding of spin relaxation of electrons,holes,and excitons in quantum wellsby investing… 
Highly Cited
1990
Highly Cited
1990
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
We have grown film structures by molecular beam epitaxy which include GaAs buffer layers grown at low substrate temperatures (250… 
Highly Cited
1990
Highly Cited
1990
Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band.
La conduction a temperature ambiante est due au saut (du second plus proche voisin) active, dans une bande de defaut profond de… 
Highly Cited
1990
Highly Cited
1990
Coupling of quantum dots on GaAs.
With far-infrared spectroscopy, coupling between electron quantum dots becomes visible in the electronic excitation spectrum. We… 
Highly Cited
1988
Highly Cited
1988
Effect of electron-electron scattering on nonequilibrium transport in quantum-well systems.
We model nonequilibrium transport in a GaAs-Al x Ga 1−x As quantum-well structure using an ensemble Monte Carlo simulation of the… 
Highly Cited
1988
Highly Cited
1988
Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
Theoretical and experimental studies are presented to understand the initial stages of growth of InGaAs on GaAs. Thermodynamic… 
Highly Cited
1985
Highly Cited
1985
Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors
An algorithm to include the Pauli exclusion principle in the Ensemble Monte Carlo method is presented. The results indicate that… 
Highly Cited
1985
Highly Cited
1985
Interface vibrational modes in GaAs-AlAs superlattices.
We report the observation of interface phonons by Raman scattering from GaAs-AlAs superlattices. These modes have frequencies… 
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