gallium arsenide

Known as: GaAs, gallium arsenide (GaAs) 
 

Topic mentions per year

Topic mentions per year

1964-2018
0500100019642018

Papers overview

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2009
2009
High-temperature annealing of gallium arsenide in vacuum causes excess evaporation of arsenic, with accumulation of gallium as… (More)
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Highly Cited
2008
Highly Cited
2008
The electronic structure of graphene causes its charge carriers to behave like relativistic particles. For a perfect graphene… (More)
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Highly Cited
2005
Highly Cited
2005
Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with… (More)
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Highly Cited
2002
Highly Cited
2002
The assembly of semiconductor nanowires and carbon nanotubes into nanoscale devices and circuits could enable diverse… (More)
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Highly Cited
2001
Highly Cited
2001
An extension of the Doherty amplifier architecture which maintains high efficiency over a wide range of output power (>6 dB) is… (More)
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Highly Cited
1999
Highly Cited
1999
Efficiency and linearity of the microwave power amplifier are critical elements for mobile communication systems. This paper… (More)
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1998
Highly Cited
1998
A new large signal model for HEMT’s and MESFET’s, capable of ,modeling the current-voltage characteristic and its derivatives… (More)
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Highly Cited
1997
Highly Cited
1997
We discuss a method for determining the optimally localized set of generalized Wannier functions associated with a set of Bloch… (More)
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1996
1996
The homogeneous linewidths in the photoluminescence excitation spectrum of a single, naturally formed gallium arsenide (GaAs… (More)
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1989
1989
The effects of gallium arsenide (GaAs) exposure on immunocompetence of B6C3F1 female mice were investigated. GaAs was… (More)
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