Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 225,442,478 papers from all fields of science
Search
Sign In
Create Free Account
Trench Foot
Known as:
Foot, Trench
, trenchfoot
, Trench Feet
Expand
National Institutes of Health
Create Alert
Alert
Related topics
Related topics
4 relations
Broader (2)
Cold Injury
Immersion Foot
Cold Temperature
Frostbite
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2019
2019
3.3kV Power Module for Electric Distribution Equipment with SiC Trench-Gate MOSFET
R. Takayanagi
,
K. Taniguchi
,
+6 authors
I. Kawamura
International Conference on Electronics Packaging
2019
Corpus ID: 184477406
3.3 kV / 200 A All-SiC module with trench-gate SiC MOSFETs is developed for static var compensator (SVC), a type of the electric…
Expand
2018
2018
Drift region engineering to reduce hot carrier effects on high voltage MOSFETs
J. Hao
,
D. Hahn
,
+5 authors
T. Kopley
IEEE International Conference on Solid-State and…
2018
Corpus ID: 54453285
In this paper, we discuss strategies to reduce hot carrier (HC) effects on two different high voltage MOSFET devices types. One…
Expand
2017
2017
The GaN trench gate MOSFET with floating islands
Lingyan Shen
,
Xinhong Cheng
,
+5 authors
Yuehui Yu
China International Forum on Solid State Lighting
2017
Corpus ID: 43994779
A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in the drift region, which can suppress the electric field…
Expand
2014
2014
MOS-gated bipolar Magnetotransistors for 360° angular sensing
V. Zieren
,
O. Wunnicke
,
K. Reimann
,
A. Duinmaijer
,
Rabindra Rijal
IEEE Sensors. Proceedings
2014
Corpus ID: 22058213
Bipolar npn Lateral MagnetoTransistors (LMTs) are attractive for in-plane magnetic-field sensing, but suffer from large offset…
Expand
2011
2011
Suitable operation conditions for different 100V trench-based power MOSFETs in 48V-input synchronous buck converters
J. Roig
,
D. Lee
,
+4 authors
B. Desoete
Proceedings of the 14th European Conference on…
2011
Corpus ID: 17101022
In this work a comparative analysis between different trench-based power MOSFETs is performed to optimize the efficiency and the…
Expand
2006
2006
High Performance and Reliability Trench Gate Power MOSFET With Partially Thick Gate Oxide Film Structure (PTOx-TMOS)
T. Aoki
,
Y. Tsuzuki
,
S. Miura
,
Y. Okabe
,
M. Suzuki
,
A. Kuroyanagi
IEEE International Symposium on Power…
2006
Corpus ID: 6055119
We have developed a novel trench-gate MOSFET (TMOS) with partially thick gate oxide film structure (PTOx) performing lower…
Expand
2005
2005
A novel E-SIMOX SOI high voltage device structure with shielding trench
X. Luo
,
Bo Zhang
,
Zhaoji Li
Proceedings. International Conference on…
2005
Corpus ID: 42722943
A new E-SIMOX high voltage device structure with shielding trench (ST) and its breakdown mechanism with a self-adapted interface…
Expand
1990
1990
Infrared Thermographic Measurement of Long Term Circulatory Compromise in Trenchfoot Injured Argentine Soldiers
N. W. Ahle
,
J. R. Buroni
,
M. Sharp
,
M. Hamlet
1990
Corpus ID: 196247357
Passive rewarming of a cold-water stressed foot was evaluated in 33 recovered trenchfoot (TF) patients and 15 uninjured men…
Expand
1990
1990
Infrared thermographic measurement of circulatory compromise in trenchfoot-injured Argentine soldiers.
N. W. Ahle
,
J. R. Buroni
,
M. Sharp
,
M. Hamlet
Aviation Space and Environmental Medicine
1990
Corpus ID: 19674174
Passive rewarming of a cold-water stressed foot was evaluated in 33 recovered trenchfoot (TF) patients and 15 uninjured men…
Expand
1962
1962
Palpable dorsalis pedis and posterior tibial pulses. Incidence in young men.
G. L. Stephens
Archives of Surgery
1962
Corpus ID: 27801848
The purpose of this study was to learn the true incidence of absence of the dorsalis pedis and posterior tibial pulses in male…
Expand
By clicking accept or continuing to use the site, you agree to the terms outlined in our
Privacy Policy
(opens in a new tab)
,
Terms of Service
(opens in a new tab)
, and
Dataset License
(opens in a new tab)
ACCEPT & CONTINUE