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Strain Relief Device Component
Known as:
Strain Relief
A structure designed to function with a connector to prevent damage to a hose or cable from excess flexing.
National Institutes of Health
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Medical Device Component or Accessory
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2013
Highly Cited
2013
Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.
C. Jia
,
T. Yu
,
+4 authors
Guoyi Zhang
Optics Express
2013
Corpus ID: 5126680
The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL…
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2006
2006
Nanostructured Organic Material: From Molecular Chains to Organic Nanodots
J. Méndez
,
R. Caillard
,
G. Otero
,
N. Nicoara
,
J. Martín-Gago
2006
Corpus ID: 67816433
We present a new strategy for nanostructuring organic molecules in order to create either molecular chains or organic nanodots…
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2005
2005
Docking, triggering, and biological activity of dynemicin A in DNA: a computational study.
T. Tuttle
,
E. Kraka
,
D. Cremer
Journal of the American Chemical Society
2005
Corpus ID: 26735196
The triggering and biological activity of the naturally occurring enediyne dynemicin A (1) was investigated, both inside and…
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Highly Cited
2004
Highly Cited
2004
Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots
P. Howe
,
E. Ru
,
E. Clarke
,
B. Abbey
,
R. Murray
,
T. Jones
2004
Corpus ID: 53561422
Atomic force microscopy and photoluminescence spectroscopy (PL) have been used to study asymmetric bilayer InAs quantum dot (QD…
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Highly Cited
1999
Highly Cited
1999
Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's
K. C. Hwang
,
P. Chao
,
+6 authors
G. Patton
IEEE Electron Device Letters
1999
Corpus ID: 32955210
We report the first demonstration of W-band metamorphic HEMTs/LNA MMICs using an AlGaAsSb lattice strain relief buffer layer on a…
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1997
1997
Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates
Junyi Cao
,
D. Pavlidis
,
A. Eisenbach
,
A. Philippe
,
C. Bru-Chevallier
,
G. Guillot
1997
Corpus ID: 121514888
A compliant substrate approach has been employed to release lattice-mismatch caused strain in GaN epilayers through stress…
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1996
1996
Strain relief at metal interfaces with square symmetry.
Müller
,
Fischer
,
Nedelmann
,
Fricke
,
Kern
Physical Review Letters
1996
Corpus ID: 8577629
We report a novel mechanism, internal (111) faceting, of strain relief at heterointerfaces with square symmetry. The mechanism…
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Highly Cited
1995
Highly Cited
1995
Strain stabilized alloying of immiscible metals in thin films.
Stevens
,
Hwang
Physical Review Letters
1995
Corpus ID: 10875504
We report on the structure and composition of codeposited thin Ag and Cu films on a Ru(0001) substrate. All three metals are…
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Highly Cited
1994
Highly Cited
1994
Atomic-resolution study of overlayer formation and interfacial mixing in the interaction of phosphorus with Si(001).
Yajun Wang
,
Xiangxiong Chen
,
R. J. Hamers
Physical Review B (Condensed Matter)
1994
Corpus ID: 34557287
Scanning tunneling microscopy (STM), tunneling spectroscopy, and Auger-electron spectroscopy have been used to study the…
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Highly Cited
1990
Highly Cited
1990
Microstructure and strain relief of Ge films grown layer by layer on Si(001).
F. Legoues
,
Matthew Copel
,
R. Tromp
Physical Review B (Condensed Matter)
1990
Corpus ID: 20850685
We have studied the microstructure of Ge films grown layer by layer on Si(001) surfaces. The growth mode was changed from a…
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