• Publications
  • Influence
Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction
We demonstrate enhancement of surface light extraction from two-dimensional photonic crystals (2D-PCs) on the electrical injected GaN-based light emitters. The effects of symmetry of PCs on lightExpand
  • 59
  • 2
Study on the stability of the high-brightness white LED
The high-power white light emitting diode (LED) is packaged by GaN-based blue LED chip with the size of 1 x 1 mm 2 , YAG:Ce yellow fluorescer, epoxy and an effective heat sinking. The wavelength ofExpand
  • 23
  • 2
Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.
The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL) between the active layer and n-GaN template. The influences of step stageExpand
  • 43
  • 2
Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN
The contacts of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au films deposited on n-GaN were studied by current–voltage (I–V) and transmission-line-method measurements. The effect of annealing temperature onExpand
  • 35
  • 2
Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes.
Research on hexagonal boron nitride (hBN) has been intensified recently due to the application of hBN as a promising system of single-photon emitters. To date, the single photon origin remains underExpand
  • 31
  • 1
High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy
Aligned carbon nanotube films were utilized to pattern a c-plane sapphire substrate. High quality GaN was obtained by epitaxy growth on carbon nanotube patterned sapphire substrates (CPSS) by aExpand
  • 15
  • 1
Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate
In this paper, different efficiency behaviors of blue LEDs fabricated on the conventional sapphire substrate (C-LEDs) and patterned sapphire substrate (PSSLEDs) by metal organic chemical vaporExpand
  • 13
  • 1
Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films
AbstractA novel carbon nanotube-patterned sapphire substrate (CPSS) has been utilized for the growth of GaN material and fabrication of a InGaN/GaN light emitting diode (LED) by metal-organic vaporExpand
  • 12
  • 1
Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition
Abstract The surface temperature of cone-shaped patterned sapphire substrate (PSS) in GaN epitaxial growth by MOCVD and its relation to forced convection conditions and substrate surface topographyExpand
  • 14
  • 1
Analyses of light extraction efficiency in GaN-based LEDs grown on patterned sapphire substrates
The GaN-based LEDs external quantum efficiency (EQE) is significantly improved by using the patterned sapphire substrate (PSS) technique. The enhancements in the light extraction efficiency (LEE) andExpand
  • 14
  • 1