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Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction
We demonstrate enhancement of surface light extraction from two-dimensional photonic crystals (2D-PCs) on the electrical injected GaN-based light emitters. The effects of symmetry of PCs on light… Expand
Study on the stability of the high-brightness white LED
The high-power white light emitting diode (LED) is packaged by GaN-based blue LED chip with the size of 1 x 1 mm 2 , YAG:Ce yellow fluorescer, epoxy and an effective heat sinking. The wavelength of… Expand
Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.
The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL) between the active layer and n-GaN template. The influences of step stage… Expand
Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN
The contacts of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au films deposited on n-GaN were studied by current–voltage (I–V) and transmission-line-method measurements. The effect of annealing temperature on… Expand
Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes.
Research on hexagonal boron nitride (hBN) has been intensified recently due to the application of hBN as a promising system of single-photon emitters. To date, the single photon origin remains under… Expand
High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy
Aligned carbon nanotube films were utilized to pattern a c-plane sapphire substrate. High quality GaN was obtained by epitaxy growth on carbon nanotube patterned sapphire substrates (CPSS) by a… Expand
Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate
In this paper, different efficiency behaviors of blue LEDs fabricated on the conventional sapphire substrate (C-LEDs) and patterned sapphire substrate (PSSLEDs) by metal organic chemical vapor… Expand
Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films
AbstractA novel carbon nanotube-patterned sapphire substrate (CPSS) has been utilized for the growth of GaN material and fabrication of a InGaN/GaN light emitting diode (LED) by metal-organic vapor… Expand
Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition
Abstract The surface temperature of cone-shaped patterned sapphire substrate (PSS) in GaN epitaxial growth by MOCVD and its relation to forced convection conditions and substrate surface topography… Expand
Analyses of light extraction efficiency in GaN-based LEDs grown on patterned sapphire substrates
The GaN-based LEDs external quantum efficiency (EQE) is significantly improved by using the patterned sapphire substrate (PSS) technique. The enhancements in the light extraction efficiency (LEE) and… Expand