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Silicon

Known as: Si, Si element, Silicon [Chemical/Ingredient] 
A trace element that constitutes about 27.6% of the earth's crust in the form of SILICON DIOXIDE. It does not occur free in nature. Silicon has the… 
National Institutes of Health

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Related topics

32 relations
Aluminum Hydroxide 200 MG / Magnesium Hydroxide 200 MG / Simethicone 25 MG Chewable Tablet [Gelusil]AsbestosBenzoyl Peroxide 0.1 MG/MG Topical GelCephalexin 250 MG Oral Capsule [Keflex]

Narrower (9)

AquatainLiSi2N3LiSiONSilicates

Broader (4)

ElementsSilicon Compounds, InorganicSilicon Compounds, UnspecifiedTrace Elements

Papers overview

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Highly Cited
1996
Highly Cited
1996
A new powder diffractometer for synchrotron radiation with a multiple-detector system.
A new powder diffractometer for synchrotron radiation with six detector arms has been constructed. Five detector arms are… 
Highly Cited
1994
Highly Cited
1994
Dimensions of luminescent oxidized and porous silicon structures.
X-ray absorption measurements from H-passivated porous Si and from oxidized Si nanocrystals, combined with electron microscopy… 
Highly Cited
1993
Highly Cited
1993
Heat-resistant singlemode optical waveguides using fluorinated polyimides
Singlemode polymer optical waveguides are fabricated using fluorinated polyimides. The optical waveguides exhibit a low loss of… 
Highly Cited
1992
Highly Cited
1992
Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering process
The lateral quantum wells formed in vertical (GaAs)n/(InAs)n and (GaP)n/(InP)n short‐period superlattices (SPS) grown on… 
Highly Cited
1992
Highly Cited
1992
Hydrogen transport in amorphous silicon.
The diffusive transport of hydrogen is used to investigate H trapping in hydrogen-depleted amorphous Si ({ital a}-Si) samples and… 
Highly Cited
1991
Highly Cited
1991
Compensating surface defects induced by Si doping of GaAs.
We have made direct experimental observation of a new mechanism for Fermi-level pinning in Si-doped (001) GaAs. Scanning… 
Highly Cited
1991
Highly Cited
1991
Mechanism of low-temperature ( <= 300 degreesC) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation.
  • J. Nakata
  • Physical Review B (Condensed Matter)
  • 1991
  • Corpus ID: 39305738
By high-energy ({similar to}2.5-MeV) heavy-ion ({sup 75}As{sup +}, {sup 84}Kr{sup +}, {sup 131,132}Xe{sup +}, etc.) beam… 
Highly Cited
1990
Highly Cited
1990
Noise characteristics of double-barrier resonant-tunneling structures below 10 kHz.
Mise en evidence d'un effet tunnel incoherent dans ces structures. Cet effet s'explique si l'incoherence de la phase des… 
Highly Cited
1987
Highly Cited
1987
New optical transitions in strained Si-Ge superlattices.
First-principles total-energy and electronic-structure calculations for Si„Ge„superlattices grown epitaxially on an (001) Si… 
Highly Cited
1986
Highly Cited
1986
Enhancement of Si oxidation by cerium overlayers and formation of cerium silicate.
  • F. U. HillebrechtMaria RonayD. RiegerF. Himpsel
  • Physical Review B (Condensed Matter)
  • 1986
  • Corpus ID: 7787311
The oxidation of Si(100) surfaces covered with 3 A Ce was studied by high-resolution photoemission spectroscopy. The oxygen…