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Silicon
Known as:
Si
, Si element
, Silicon [Chemical/Ingredient]
A trace element that constitutes about 27.6% of the earth's crust in the form of SILICON DIOXIDE. It does not occur free in nature. Silicon has the…
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National Institutes of Health
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Related topics
Related topics
32 relations
Aluminum Hydroxide 200 MG / Magnesium Hydroxide 200 MG / Simethicone 25 MG Chewable Tablet [Gelusil]
Asbestos
Benzoyl Peroxide 0.1 MG/MG Topical Gel
Cephalexin 250 MG Oral Capsule [Keflex]
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Narrower (9)
Aquatain
LiSi2N3
LiSiON
Silicates
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Broader (4)
Elements
Silicon Compounds, Inorganic
Silicon Compounds, Unspecified
Trace Elements
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2004
Highly Cited
2004
Carbon nanotube transistor operation at 2.6 Ghz
Shengdong Li
,
Zhen Yu
,
S. Yen
,
W. Tang
,
P. Burke
2004
Corpus ID: 62895452
We present the first demonstration of single-walled carbon nanotube transistor operation at microwave frequencies. To measure the…
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Highly Cited
1994
Highly Cited
1994
VLSI fabrication principles : sil-icon and gallium arsenide
S. Ghandhi
1994
Corpus ID: 108183945
Material Properties. Phase Diagrams and Solid Solubility. Crystal Growth and Doping. Diffusion. Epitaxy. Ion Implantation. Native…
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Highly Cited
1992
Highly Cited
1992
Optical properties of porous silicon: A first-principles study.
Búda
,
Kohanoff
,
Parrinello
Physical Review Letters
1992
Corpus ID: 33713440
We show that first-principles electronic structure calculations of silicon wires with diameters up to \ensuremath{\sim}1.5 nm…
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Highly Cited
1991
Highly Cited
1991
Diamond cold cathode
M. Geis
,
N. Efremow
,
+4 authors
J. Hochedez
IEEE Electron Device Letters
1991
Corpus ID: 11725138
Diamond cold cathodes have been formed by fabricating mesa-etched diodes using carbon ion implantation into p-type diamond…
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Highly Cited
1991
Highly Cited
1991
Field-Induced Nanometer- to Atomic-Scale Manipulation of Silicon Surfaces with the STM
I. Lyo
,
P. Avouris
Science
1991
Corpus ID: 21280469
The controlled manipulation of silicon at the nanometer scale will facilitate the fabrication of new types of electronic devices…
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Highly Cited
1991
Highly Cited
1991
Current-induced light emission from a porous silicon device
A. Richter
,
P. Steiner
,
F. Kozlowski
,
W. Lang
IEEE Electron Device Letters
1991
Corpus ID: 1749185
Experiments with light-emitting porous silicon (LEPOS) are described. The porous silicon was made from n-type silicon by…
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Highly Cited
1990
Highly Cited
1990
Influence of surfactants in Ge and Si epitaxy on Si(001).
M. Copel
,
M. Reuter
,
M. H. Hoegen
,
R. Tromp
Physical Review B (Condensed Matter)
1990
Corpus ID: 45737979
Etude de l'influence des agents de surface As et Sb sur la croissance de Ge/Si (001) et Si/GeSi (001). En utilisant un agent de…
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Highly Cited
1989
Highly Cited
1989
Amorphous silicon and related materials
H. Fritzsche
1989
Corpus ID: 137509489
This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related…
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Highly Cited
1988
Highly Cited
1988
Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
G. Patton
,
S. S. Iyer
,
S. L. Delage
,
Sandip Tiwari
,
J. Stork
International Electron Devices Meeting
1988
Corpus ID: 13529600
We report the first SiGe base heterojunction Bipolar Transistors (HBT) The devices were fabricated using Molecular Beam Epitaxy…
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Highly Cited
1985
Highly Cited
1985
Structure and bonding in small silicon clusters.
Raghavachari
,
Logovinsky
Physical Review Letters
1985
Corpus ID: 45093073
Accurate ab initio molecular-orbital calculations are performed to obtain the ground-state geometries and electronic…
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