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Sige sp. THS-2005

 
National Institutes of Health

Papers overview

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Highly Cited
2014
Highly Cited
2014
In this brief, a novel U-shape-channel tunneling field-effect transistor (UTFET) with a SiGe source region is investigated by 2-D… Expand
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Highly Cited
2014
Highly Cited
2014
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume… Expand
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Highly Cited
2009
Highly Cited
2009
A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f<inf>T… Expand
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Highly Cited
2008
Highly Cited
2008
A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si(001) is presented. The strain field… Expand
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Highly Cited
2007
Highly Cited
2007
A fourth-order continuous-time LC bandpass sigma-delta ADC is designed using a new architecture with only non-return-to-zero… Expand
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Highly Cited
2006
Highly Cited
2006
We report on the energy band gap and band lineup of $\mathrm{SiGe}∕\mathrm{Si}$ heterostructures either in the case of coherently… Expand
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Highly Cited
2004
Highly Cited
2004
It is demonstrated that SiGe bipolar technologies are well suited for voltage-controlled oscillators (VCOs) in 77-GHz automotive… Expand
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Highly Cited
2001
Highly Cited
2001
A unified approach to RF and microwave noise parameter modeling in bipolar transistors is presented. Circuit level noise… Expand
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Highly Cited
1998
Highly Cited
1998
The use of aluminum oxide as the gate insulator for low temperature (600/spl deg/C) polycrystalline SiGe thin-film transistors… Expand
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Highly Cited
1986
Highly Cited
1986
Inland areas of northern California have an intense grass pollination in the spring of each year. This is accompanied by a… Expand