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Sige sp. THS-2005

 
National Institutes of Health

Papers overview

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2014
2014
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume… Expand
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2014
2014
In this brief, a novel U-shape-channel tunneling field-effect transistor (UTFET) with a SiGe source region is investigated by 2-D… Expand
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Highly Cited
2009
Highly Cited
2009
A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f<inf>T… Expand
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2009
2009
This paper describes 80–94 GHz and 70–77 GHz I-Q phase shifters and the corresponding transmitter and receiver ICs, fabricated in… Expand
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2009
2009
This paper examines the performance and reliability implications associated with aggressively biased cascode SiGe HBT power… Expand
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2007
2007
A fourth-order continuous-time LC bandpass sigma-delta ADC is designed using a new architecture with only non-return-to-zero… Expand
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2007
2007
We investigate transistor-level layout-based techniques for SEE mitigation in advanced SiGe HBTs. The approach is based on the… Expand
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Highly Cited
2004
Highly Cited
2004
It is demonstrated that SiGe bipolar technologies are well suited for voltage-controlled oscillators (VCOs) in 77-GHz automotive… Expand
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2001
2001
A unified approach to RF and microwave noise parameter modeling in bipolar transistors is presented. Circuit level noise… Expand
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1986
1986
Inland areas of northern California have an intense grass pollination in the spring of each year. This is accompanied by a… Expand
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