Sige sp. THS-2005
National Institutes of Health
Papers overview
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Using molecular dynamics simulations, we show that the thermal conductivity (κ) of Si(0.5)Ge(0.5) can be reduced by more than one…
A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f<inf>T…
The goal of achieving terahertz (THz) transistors within the silicon material system has generated significant recent interest…
A W-band square-law detector was implemented in a commercial SiGe 0.12µm BiCMOS process (IBM8HP, f<inf>t</inf> = 200 GHz) and was…
A fourth-order continuous-time LC bandpass sigma-delta ADC is designed using a new architecture with only non-return-to-zero…
We investigate transistor-level layout-based techniques for SEE mitigation in advanced SiGe HBTs. The approach is based on the…
It is demonstrated that SiGe bipolar technologies are well suited for voltage-controlled oscillators (VCOs) in 77-GHz automotive…
A revision is presented of the technique to determine the junction temperature and thermal resistance of bipolar transistors. It…
A unified approach to RF and microwave noise parameter modeling in bipolar transistors is presented. Circuit level noise…
The use of aluminum oxide as the gate insulator for low temperature (600/spl deg/C) polycrystalline SiGe thin-film transistors…