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Sige sp. THS-2005

National Institutes of Health

Papers overview

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Highly Cited
2014
Highly Cited
2014
In this brief, a novel U-shape-channel tunneling field-effect transistor (UTFET) with a SiGe source region is investigated by 2-D… 
Highly Cited
2014
Highly Cited
2014
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume… 
Highly Cited
2009
Highly Cited
2009
A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f<inf>T… 
Highly Cited
2008
Highly Cited
2008
A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si(001) is presented. The strain field… 
Highly Cited
2006
Highly Cited
2006
We report on the energy band gap and band lineup of $\mathrm{SiGe}∕\mathrm{Si}$ heterostructures either in the case of coherently… 
Highly Cited
2004
Highly Cited
2004
It is demonstrated that SiGe bipolar technologies are well suited for voltage-controlled oscillators (VCOs) in 77-GHz automotive… 
Review
2004
Review
2004
  • J. Cressler
  • IEEE Transactions on Device and Materials…
  • 2004
  • Corpus ID: 25645339
We review the emerging reliability issues associated with high-performance SiGe HBT technologies which are being increasingly… 
Highly Cited
2001
Highly Cited
2001
A unified approach to RF and microwave noise parameter modeling in bipolar transistors is presented. Circuit level noise… 
Highly Cited
1998
Highly Cited
1998
The use of aluminum oxide as the gate insulator for low temperature (600/spl deg/C) polycrystalline SiGe thin-film transistors… 
Highly Cited
1986