Sige sp. THS-2005
National Institutes of Health
Papers overview
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In this brief, a novel U-shape-channel tunneling field-effect transistor (UTFET) with a SiGe source region is investigated by 2-D…
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume…
A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f<inf>T…
A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si(001) is presented. The strain field…
We report on the energy band gap and band lineup of $\mathrm{SiGe}∕\mathrm{Si}$ heterostructures either in the case of coherently…
It is demonstrated that SiGe bipolar technologies are well suited for voltage-controlled oscillators (VCOs) in 77-GHz automotive…
We review the emerging reliability issues associated with high-performance SiGe HBT technologies which are being increasingly…
A unified approach to RF and microwave noise parameter modeling in bipolar transistors is presented. Circuit level noise…