Sige sp. THS-2005
National Institutes of Health
Papers overview
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A W-band square-law detector was implemented in a commercial SiGe 0.12µm BiCMOS process (IBM8HP, f<inf>t</inf> = 200 GHz) and was…
Purpose – The purpose of this paper is to present an analytical drain current model for output characteristics of strained‐Si…
A fourth-order continuous-time LC bandpass sigma-delta ADC is designed using a new architecture with only non-return-to-zero…
In this paper, we present results from the simulation of submicrometer Si/SiGe modulation-doped field-effect transistors (MODFETs…
This paper describes an extensive experimental study of TiN/HfO/sub 2//SiGe and TiN/HfO/sub 2//Si cap/SiGe gate stacked…
An improved direct parameter extraction method of SiGe heterojunction bipolar transistors (HBTs) for the vertical bipolar…
In this paper we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of…
We have fabricated strained SiGe vertical P-channel and N-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) by…
The use of aluminum oxide as the gate insulator for low temperature (600/spl deg/C) polycrystalline SiGe thin-film transistors…
A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistors (MODFETs) is described. Self…