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Shockley Semiconductor Laboratory

Known as: Shockley, Shockley Semiconductor 
Shockley Semiconductor Laboratory, a division of Beckman Instruments, Inc., became in 1956 the first establishment, in what came to be known as… 
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Papers overview

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2013
2013
Optical rectennas are an attractive technology for high-efficiency, low-cost solar cells if several technological issues can be… 
2012
2012
Expansion of Shockley stacking faults in 4H-SiC achieved by the radiation-enhanced glide of 30°-Si(g) partial dislocations has… 
2011
2011
Multi-photon photoemission, scanning tunneling spectroscopy and first-principles electronic structure calculations have been… 
2010
2010
AbstractThe electron transfer processes at the interface between 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) and… 
2009
2009
Electron-phonon e-ph coupling in theunoccupied surface state on Pd111 is studied using density- functional perturbation-theory… 
2008
2008
For the first time, we report high-kappa/metal-gate pMOSFETs fabricated on high-quality 200-mm germanium-on-insulator (GeOI… 
2002
2002
The decay of excess carriers in nondegenerate semiconductors generated by a light impulse $\ensuremath{\delta}(t)$ is governed by… 
2001
2001
Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from… 
Highly Cited
1975
Highly Cited
1975
The reason why the usual FET shows the saturated characteristics has been shown that with increasing drain voltage, the effect of…