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Shockley Semiconductor Laboratory
Known as:
Shockley
, Shockley Semiconductor
Shockley Semiconductor Laboratory, a division of Beckman Instruments, Inc., became in 1956 the first establishment, in what came to be known as…
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Related topics
6 relations
Integrated circuit
Reticon
Solar cell
Thyristor
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Will Rectenna Solar Cells Be Practical
G. Moddel
2013
Corpus ID: 53314200
Optical rectennas are an attractive technology for high-efficiency, low-cost solar cells if several technological issues can be…
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2010
2010
Time-resolved measurements of electron transfer processes at the PTCDA/Ag(111) interface
C. Schwalb
,
M. Marks
,
+4 authors
U. Höfer
2010
Corpus ID: 56394628
AbstractThe electron transfer processes at the interface between 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) and…
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2010
2010
Reversible–irreversible plasticity transition in twinned copper nanopillars
J. A. Brown
,
N. Ghoniem
2010
Corpus ID: 34374857
2009
2009
The New Power Brokers: high VolTage rF DeVices
D. Vye
,
L. Pelletier
,
Steven
,
D. Aichele
,
Ray Crampto
2009
Corpus ID: 114939326
Ever since Bell Lab physicists Shockley, Bardeen and Brattain invented the transistor, this little solid state device has been…
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2009
2009
Unusually weak electron-phonon coupling in the Shockley surface state on Pd(111)
I. Sklyadneva
,
R. Heid
,
+5 authors
E. Chulkov
2009
Corpus ID: 123155020
Electron-phonon e-ph coupling in theunoccupied surface state on Pd111 is studied using density- functional perturbation-theory…
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2009
2009
Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors
P. Muzykov
,
R. Kennedy
,
+4 authors
T. Sudarshan
Microelectronics and reliability
2009
Corpus ID: 31644266
2008
2008
High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances
C. Le Royer
,
B. Vincent
,
+14 authors
S. Deleonibus
IEEE Electron Device Letters
2008
Corpus ID: 28403297
For the first time, we report high-kappa/metal-gate pMOSFETs fabricated on high-quality 200-mm germanium-on-insulator (GeOI…
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2002
2002
General analytic solution to the Shockley-Read-Hall rate equations with a single-level defect
D. Debuf
,
Y. Shrivastava
,
A. Dunn
2002
Corpus ID: 38095449
The decay of excess carriers in nondegenerate semiconductors generated by a light impulse $\ensuremath{\delta}(t)$ is governed by…
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2001
2001
HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation
S. Velicu
,
G. Badano
,
+6 authors
R. Ashokan
2001
Corpus ID: 96227146
Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from…
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1975
1975
Radiation Effects in Hg1-x Cdx Te
C. Mallon
,
B. A. Green
,
R. Leadon
,
J. A. Naber
IEEE Transactions on Nuclear Science
1975
Corpus ID: 23780400
Radiation effects studies have been performed at 10 and 80°K in bulk Hgo.8CdO.2Te. These studies concentrated on radiation damage…
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