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Shockley Semiconductor Laboratory

Known as: Shockley, Shockley Semiconductor 
Shockley Semiconductor Laboratory, a division of Beckman Instruments, Inc., became in 1956 the first establishment, in what came to be known as… 
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Integrated circuitReticonSolar cellThyristor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Will Rectenna Solar Cells Be Practical
Optical rectennas are an attractive technology for high-efficiency, low-cost solar cells if several technological issues can be… 
2012
2012
Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
Expansion of Shockley stacking faults in 4H-SiC achieved by the radiation-enhanced glide of 30°-Si(g) partial dislocations has… 
2011
2011
Hybridization between the unoccupied Shockley surface state and bulk electronic states on Cu(111)
Multi-photon photoemission, scanning tunneling spectroscopy and first-principles electronic structure calculations have been… 
2010
2010
Time-resolved measurements of electron transfer processes at the PTCDA/Ag(111) interface
AbstractThe electron transfer processes at the interface between 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) and… 
2010
2010
Reversible–irreversible plasticity transition in twinned copper nanopillars
2009
2009
Unusually weak electron-phonon coupling in the Shockley surface state on Pd(111)
Electron-phonon e-ph coupling in theunoccupied surface state on Pd111 is studied using density- functional perturbation-theory… 
2008
2008
High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances
For the first time, we report high-kappa/metal-gate pMOSFETs fabricated on high-quality 200-mm germanium-on-insulator (GeOI… 
2002
2002
General analytic solution to the Shockley-Read-Hall rate equations with a single-level defect
The decay of excess carriers in nondegenerate semiconductors generated by a light impulse $\ensuremath{\delta}(t)$ is governed by… 
2001
2001
HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation
Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from… 
Highly Cited
1975
Highly Cited
1975
Field-effect transistor versus analog transistor (static induction transistor)
The reason why the usual FET shows the saturated characteristics has been shown that with increasing drain voltage, the effect of… 
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