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Sheet resistance
Known as:
Ohms per square
, Surface resistivity
, Area resistivity
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Sheet resistance is a measure of resistance of thin films that are nominally uniform in thickness. It is commonly used to characterize materials made…
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Related topics
Related topics
8 relations
Electrostatic discharge materials
Flexible organic light-emitting diode
Hybrid integrated circuit
Ohm's law
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2012
2012
Silver nanowire-polymer composite electrode for high performance solution-processed thin-film transistors
L. Chen
,
P. Lin
,
+4 authors
C. Lee
2012
Corpus ID: 73555278
2008
2008
Polymer photovoltaic devices with highly transparent cathodes
Fang‐Chung Chen
,
Jyh-Lih Wu
,
K. Hsieh
,
Wen‐Chang Chen
,
Shih-Wei Lee
2008
Corpus ID: 55512471
2007
2007
Single step deposition of different morphology ZnO gas sensing films
Á. Németh
,
É. Horváth
,
Z. Lábadi
,
L. Fedák
,
I. Bársony
2007
Corpus ID: 59476337
2006
2006
Fabrication of carbon nanotube emitter on the flexible substrate
Jong Hyung Choi
,
Jinny Park
,
+5 authors
D. Choe
2006
Corpus ID: 59578269
Highly Cited
2002
Highly Cited
2002
Optical properties of indium tin oxide and fluorine-doped tin oxide surfaces: correlation of reflectivity, skin depth, and plasmon frequency with conductivity
S. Brewer
,
S. Franzen
2002
Corpus ID: 7763997
2002
2002
Influence of oxygen pressure on the properties and biocompatibility of titanium oxide fabricated by metal plasma ion implantation and deposition
Y. Leng
,
N. Huang
,
+6 authors
P. Chu
2002
Corpus ID: 53570352
2001
2001
Ultimate properties of the polypropylene film for energy storage capacitors
M. Bramoulle
,
J. Marret
,
P. Michalczyk
,
D. de Cervens
PPPS- Pulsed Power Plasma Science . 28th IEEE…
2001
Corpus ID: 25331522
For current large projects to date, the mass production of new raw materials and the corresponding capacitors has not been…
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Highly Cited
2000
Highly Cited
2000
Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)
B. Lee
,
R. Choi
,
+7 authors
J. Lee
International Electron Devices Meeting…
2000
Corpus ID: 56269695
MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films…
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Highly Cited
1999
Highly Cited
1999
Printing Process Suitable for Reel-to-Reel Production of High-Performance Organic Transistors and Circuits
J. Rogers
,
Zhenan Bao
,
A. Makhija
,
P. Braun
Advances in Materials
1999
Corpus ID: 17100558
cause appropriate compounds now exist for many types of devices, research has expanded to include patterning methods that can…
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Highly Cited
1996
Highly Cited
1996
OPTICAL INDICES OF PYROLYTIC TIN-OXIDE GLASS
K. V. Rottkay
,
M. Rubin
1996
Corpus ID: 136583668
SnO{sub 2}:F is a widely used transparent conductor and commercially available in a multilayer structure as Tech glass. Current…
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