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Finite mixture modelling using the skew normal distribution
Normal mixture models provide the most popular framework for mod- elling heterogeneity in a population with continuous outcomes arising in a variety of subclasses. In the last two decades, the skewExpand
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Robust mixture modeling using the skew t distribution
A finite mixture model using the Student's t distribution has been recognized as a robust extension of normal mixtures. Recently, a mixture of skew normal distributions has been found to be effectiveExpand
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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
Dielectric properties of ultrathin hafnium oxide reoxidized with rapid thermal annealing (RTA) have been investigated. Capacitance equivalent oxide thickness (CET) of 45 A hafnium oxide was scaledExpand
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Estimation and prediction in linear mixed models with skew-normal random effects for longitudinal data.
This paper extends the classical linear mixed model by considering a multivariate skew-normal assumption for the distribution of random effects. We present an efficient hybrid ECME-NR algorithm forExpand
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Detection of Human Influenza A Viruses by Loop-Mediated Isothermal Amplification
ABSTRACT Here we describe the use of the loop-mediated isothermal amplification (LAMP) method to detect human influenza viruses (H1 to H3). Our results were correlated 100% with results deduced fromExpand
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Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs
Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibitedExpand
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Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.
Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience including topologically protected charge transport,1,2 spatially separated excitons,3 and strongly anisotropic heatExpand
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Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon
Effects of interfacial layer growth on reactively sputter-deposited TiO2 films were studied. Leakage current was reduced to 10−8 A/cm2 at +1 V after annealing in oxygen ambient and showedExpand
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Temperature acceleration of time-dependent dielectric breakdown
A model is proposed for predicting the temperature dependence of time-to-breakdown t/sub BD/ in MOS circuits. While a previous study proposed a field-dependent activation energy, this model predictsExpand
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MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics
MOSFETs and MOSCAPs of a single-layer thin HfO/sub 2/ gate dielectric with dual polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and dopant activationExpand
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