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Shallow donor

A shallow donor refers to a donor that contributes an electron that exhibits energy states equivalent to atomic hydrogen with an altered expected… 
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Related topics

Related topics

4 relations
Donor (semiconductors)Electronic band structureEnergy levelSemiconductor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Carbon impurities in SrTiO3 from first principles
Perovskite oxides have attracted both experimental and theoretical attention due to their high permittivities, with SrTiO3 used… 
2013
2013
Photoluminescence of high optical quality CdSe thin fi lms deposited by close-spaced vacuum sublimation
2010
2010
Transient photoluminescence of shallow donor bound excitons in GaN
We present a detailed study of photoluminescence transients for neutral donor bound excitons (DBEs) in GaN, notably the ON donor… 
2009
2009
Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system
AlN codoped ZnO films were deposited on sapphire substrates at low temperature using a cosputter system under various N_2/(N_2… 
2006
2006
The Fermi level dependence of the optical and magnetic properties of Ga1−xMnxN grown by metal–organic chemical vapour deposition
The suppression of the ferromagnetic behaviour of metal–organic chemical vapour deposition grown Ga1−xMnxN epilayers by silicon… 
1999
1999
Doping of ZnSe during molecular beam epitaxial growth using an atomic phosphorus source
Zinc selenide films were doped with phosphorus during molecular beam epitaxial (MBE) growth by employing a novel, valved, three… 
1993
1993
High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide
A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after… 
Highly Cited
1982
Highly Cited
1982
Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52 As heterojunctions grown by molecular beam epitaxy
Modulation doped Ga0.47In0.53As‐Al0.48In0.52 As single‐period heterostructures have been prepared by molecular beam epitaxy (MBE… 
1976
1976
Incorporation of deep centres in VPE GaAs
The incorporation of deep levels in high purity vapour phase epitaxy (VPE) GaAs is studied as a function of the crystal growth… 
1974
1974
Far-infrared spectroscopy of bound and free electrons in III-V and II-VI semiconductors. I. Transitions between excited states observed in Zeeman spectroscopy of the shallow donor impurities
The paper is one of a series providing a comprehensive study of cyclotron resonance and impurity transitions for n-type GaAs, InP… 
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