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Series and parallel circuits
Known as:
Series & parallel circuits
, Series circuit
, Parallel (electronics)
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Components of an electrical circuit or electronic circuit can be connected in many different ways. The two simplest of these are called series and…
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Related topics
Related topics
50 relations
AND gate
Analog delay line
Analog signal processing
Analog television
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Composite Characteristics of Memristor Series and Parallel Circuits
Xiaofang Hu
,
Gang Feng
,
Lu Liu
,
Shukai Duan
International Journal of Bifurcation and Chaos in…
2015
Corpus ID: 30967470
Memristors have attracted considerable attention since their physical realization was reported by Hewlett-Packard (HP) Lab in…
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Highly Cited
2004
Highly Cited
2004
Carbon nanotube transistor operation at 2.6 Ghz
Shengdong Li
,
Zhen Yu
,
S. Yen
,
W. Tang
,
P. Burke
2004
Corpus ID: 62895452
We present the first demonstration of single-walled carbon nanotube transistor operation at microwave frequencies. To measure the…
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Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
Yu-Chih Tseng
,
Peiqi Xuan
,
+4 authors
H. Dai
2004
Corpus ID: 1560670
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS…
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Highly Cited
2004
Highly Cited
2004
A fourth-order /spl Sigma//spl Delta/ interface for micromachined inertial sensors
V. Petkov
,
B. Boser
IEEE Journal of Solid-State Circuits
2004
Corpus ID: 8680792
This paper presents the design and implementation of a high-order /spl Sigma//spl Delta/ interface for micromachined inertial…
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Highly Cited
2004
Highly Cited
2004
17.6 A Fourth-Order Σ∆ Interface for Micromachined Inertial Sensors
V. Petkov
,
B. Boser
2004
Corpus ID: 17930793
This paper presents the design and implementation of a high-order interface for micromachined inertial sensors, which employs an…
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Highly Cited
2003
Highly Cited
2003
Common duty ratio control of input series connected modular DC-DC converters with active input voltage and load current sharing
R. Giri
,
R. Ayyanar
,
N. Mohan
Eighteenth Annual IEEE Applied Power Electronics…
2003
Corpus ID: 47462889
In this paper, active input voltage and load current sharing of DC-DC converter modules connected in series at the input and…
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Highly Cited
1999
Highly Cited
1999
Submicron transferred-substrate heterojunction bipolar transistors
Q. Lee
,
S. Martin
,
D. Mensa
,
R.P. Smith
,
J. Guthrie
,
M. Rodwell
IEEE Electron Device Letters
1999
Corpus ID: 42289514
We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors (HBT's). Devices with 0.4-/spl mu/m…
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Highly Cited
1999
Highly Cited
1999
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
W. Henson
,
K. Ahmed
,
+5 authors
D. Venables
IEEE Electron Device Letters
1999
Corpus ID: 26752814
High-frequency capacitance-voltage (C-V) measurements have been made on ultrathin oxide metal-oxide-semiconductor (MOS…
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Highly Cited
1996
Highly Cited
1996
ELECTRON TRANSFER IN SELF-ASSEMBLED INORGANIC POLYELECTROLYTE/METAL NANOPARTICLE HETEROSTRUCTURES
D. Feldheim
,
Katherine C. Grabar
,
M. Natan
,
T. Mallouk
1996
Corpus ID: 94983221
The way in which molecular building blocks are arranged within supramolecular structures has a marked effect on their chemical…
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Highly Cited
1987
Highly Cited
1987
Submicrometer-channel CMOS for low-temperature operation
J. Sun
,
Yuan Taur
,
R. Dennard
,
S. Klepner
IEEE Transactions on Electron Devices
1987
Corpus ID: 9251626
A 0.5-µm-channel CMOS design optimized for liquid-nitrogen temperature operation is described. Thin gate oxide (12.5 nm) and dual…
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