SIC protein, Streptococcus
National Institutes of Health
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This paper studies the possibility of building a modular multilevel converter (M2C) using silicon carbide (SiC) switches. The…
Ten-kilovolt SiC MOSFETs are currently under development by a number of organizations in the United States, with the aim of…
Super‐plasticity of single‐crystal beta‐SiC [111] nanowires for > 200 % elongation was observed by in situ axial‐tensile…
Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the…
Using electrochemical etching of a polycrystalline 3C-SiC target and subsequent ultrasonic treatment in water solution, we have…
The reverse bias leakage current in macroscopic GaN Schottky diodes is found to be insensitive to barrier height. Using a…
Recent studies regarding MOSFETs on SiC reveal that 4H-SiC devices suffer from a low inversion layer mobility, while in 6H-SiC…
We have fabricated 1 kV 4H and 6H SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination…
Edge-terminated high-voltage Ti/4H-SiC Schottky rectifiers were successfully fabricated by using highly resistive layers at the…