SIC protein, Streptococcus
National Institutes of Health
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As already shown in previous publications (e.g. [1]), Silicon Carbide transistors offer a great potential for reducing system…
This paper presents the development and experimental performance of a 10 kW high power density three-phase ac-dc-ac converter…
Over the last 3 years under the Wide Band Gap Semiconductor (WBGS) DARPA program, TriQuint and their partners, II-VI, IQE, BAE…
This paper describes a two-stage 5-W broad-band amplifier covering the frequency range from 10 MHz to 2.4 GHz. An SiC MESFET is…
We report the characteristics of large area (3.3 /spl times/ 3.3 mm/sup 2/) high-voltage 4H-SiC DiMOSFETs. The MOSFETs show a…
High power densities of 5.2 W/mm and 63% power added efficiency (PAE) have been demonstrated for SiC MESFETs at 3.5 GHz. Wide…
We report for the first time the development of state-of-the-art SiC MESFETs on high-resistivity 4H-SiC substrates. 0.5 /spl mu/m…
A theoretical model, based on the bond-polarizability concept, is presented for the calculation of the Raman scattering…