Wide bandgap semiconductor devices and MMICs for RF power applications

@article{Palmour2001WideBS,
  title={Wide bandgap semiconductor devices and MMICs for RF power applications},
  author={J. W. Palmour and S K Sheppard and R. P. Smith and S. Allen and W. L. Pribble and T J Smith and Zoltan Ring and J. J. Sumakeris and A. W. Saxler and J. W. Milligan},
  journal={International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)},
  year={2001},
  pages={17.4.1-17.4.4}
}
High power densities of 5.2 W/mm and 63% power added efficiency (PAE) have been demonstrated for SiC MESFETs at 3.5 GHz. Wide bandwidth MMICs have also been demonstrated with SiC MESFETs, yielding 37 W at 3.5 GHz. Even higher power densities have been obtained with GaN HEMTs, showing up to 12 W/mm under pulsed conditions. Hybrid amplifiers using GaN HEMTs on SiC substrates have demonstrated a pulsed output power level of 50.1 W, with 8 dB gain and PAE of 28% at 10 GHz, and CW power levels of 36… CONTINUE READING
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