SIC-POVM

Known as: SICPOVM 
A symmetric, informationally complete, positive operator valued measure (SIC-POVM) is a special case of a generalized measurement on a Hilbert space… (More)
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Topic mentions per year

Topic mentions per year

1976-2017
05101519762017

Papers overview

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2016
2016
An unexpected connection exists between compatibility criteria for quantum states and Symmetric Informationally Complete quantum… (More)
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2015
2015
Silicon carbide Schottky barrier diodes (SiC-SBDs) are prone to electromagnetic oscillations in the output characteristics. The… (More)
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2014
2014
In this paper, we examine a generalization of the symmetric informationally complete POVMs. SIC-POVMs are the optimal… (More)
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2014
2014
With the commercial availability of SiC power devices, their acceptance is expected to grow in consideration of the excellent low… (More)
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2011
2011
An experimental performance comparison between SiC JFET and SiC BJT switches which are used as the main switch for a 2 kW dc/dc… (More)
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2006
2006
The generalized Pauli group and its normalizer, the Clifford group, have a rich mathematical structure which is relevant to the… (More)
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2006
2006
This paper investigates the punch-through phenomenon in SiC Schottky Barrier Diodes (SBD) from capacitance–voltage (C–V… (More)
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2006
2006
  • Isaac H. Kima
  • 2006
I introduce a generalization of spherical t-design. Among those, generalized spherical 2-design turns out to have a close… (More)
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2004
2004
We provide a partial solution to the problem of constructing mutually unbiased bases (MUBs) and symmetric informationally… (More)
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2004
2004
Previous efforts have revealed instabilities in standard SiC MESFET device electrical characteristics, which have been attributed… (More)
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