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SIC-POVM

Known as: SICPOVM 
A symmetric, informationally complete, positive operator valued measure (SIC-POVM) is a special case of a generalized measurement on a Hilbert space… 
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Papers overview

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Highly Cited
2011
Highly Cited
2011
This paper presents an analysis of single discrete silicon carbide (SiC) JFET and BJT devices and their parallel operation. The… 
2010
2010
Z. E. D. Medendorp1,†, F. A. Torres-Ruiz, L. K. Shalm, G. N. M. Tabia, C. A. Fuchs, and A. M. Steinberg Centre for Quantum… 
Highly Cited
2006
Highly Cited
2006
Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel… 
Highly Cited
2004
Highly Cited
2004
Previous efforts have revealed instabilities in standard SiC MESFET device electrical characteristics, which have been attributed… 
Highly Cited
2002
Highly Cited
2002
Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with… 
Highly Cited
2001
Highly Cited
2001
High power densities of 5.2 W/mm and 63% power added efficiency (PAE) have been demonstrated for SiC MESFETs at 3.5 GHz. Wide… 
Highly Cited
1999
Highly Cited
1999
SiC MESFET's have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz… 
Highly Cited
1989
Highly Cited
1989
It has been tried to design and prepare SiC/C Functionally Gradient Material (FGM) accompanying compositional gradient from SiC…