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SIC-POVM
Known as:
SICPOVM
A symmetric, informationally complete, positive operator valued measure (SIC-POVM) is a special case of a generalized measurement on a Hilbert space…
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Related topics
Related topics
7 relations
Hilbert space
Measurement in quantum mechanics
Mutually unbiased bases
POVM
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Highly Cited
2011
Highly Cited
2011
Investigation on the parallel operation of discrete SiC BJTs and JFETs
M. Chinthavali
,
P. Ning
,
Yutian Cui
,
L. Tolbert
Applied Power Electronics Conference
2011
Corpus ID: 6063231
This paper presents an analysis of single discrete silicon carbide (SiC) JFET and BJT devices and their parallel operation. The…
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2010
2010
Experimental characterization of qutrits using SIC-POVMs
Z. Medendorp
,
F. A. Torres-Ruíz
,
L. Shalm
,
G. Tabia
,
C. Fuchs
,
Aephraim M. Steinberg
2010
Corpus ID: 119124858
Z. E. D. Medendorp1,†, F. A. Torres-Ruiz, L. K. Shalm, G. N. M. Tabia, C. A. Fuchs, and A. M. Steinberg Centre for Quantum…
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Highly Cited
2007
Highly Cited
2007
NanoSIMS isotopic analysis of small presolar grains: Search for Si3N4 grains from AGB stars and Al and Ti isotopic compositions of rare presolar SiC grains
E. Zinner
,
S. Amari
,
+8 authors
R. Lewis
2007
Corpus ID: 11707554
Highly Cited
2006
Highly Cited
2006
Fabrication and characterization of field-plated buried-gate SiC MESFETs
K. Andersson
,
M. Sudow
,
+6 authors
N. Rorsman
IEEE Electron Device Letters
2006
Corpus ID: 19806445
Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel…
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Highly Cited
2004
Highly Cited
2004
S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60% PAE
H. G. Henry
,
G. Augustine
,
+7 authors
R. C. Clarke
IEEE Transactions on Electron Devices
2004
Corpus ID: 27977642
Previous efforts have revealed instabilities in standard SiC MESFET device electrical characteristics, which have been attributed…
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Highly Cited
2002
Highly Cited
2002
Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires
G. Gundiah
,
G. V. Madhav
,
A. Govindaraj
,
M. Seikh
,
C. Rao
2002
Corpus ID: 38197322
Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with…
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Highly Cited
2001
Highly Cited
2001
Wide bandgap semiconductor devices and MMICs for RF power applications
J. Palmour
,
S. Sheppard
,
+7 authors
J. Milligan
International Electron Devices Meeting. Technical…
2001
Corpus ID: 38854842
High power densities of 5.2 W/mm and 63% power added efficiency (PAE) have been demonstrated for SiC MESFETs at 3.5 GHz. Wide…
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Highly Cited
1999
Highly Cited
1999
Progress in high power SiC microwave MESFETs
S. Allen
,
W. Pribble
,
R. Sadler
,
T.S. Alcorn
,
Z. Ring
,
J. Palmour
IEEE MTT-S International Microwave Symposium…
1999
Corpus ID: 32472782
SiC MESFET's have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz…
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Highly Cited
1998
Highly Cited
1998
Design requirements for SiC/SiC composites structural material in fusion power reactor blankets
L. Giancarli
,
J. Bonal
,
A. Caso
,
G. Le Marois
,
N. Morley
,
J. Salavy
1998
Corpus ID: 23450363
Highly Cited
1989
Highly Cited
1989
Design of SiC/C Functionally Gradient Material and Its Preparation by Chemical Vapor Deposition
M. Sasaki
,
Yucong Wang
,
T. Hirano
,
T. Hirai
1989
Corpus ID: 100834384
It has been tried to design and prepare SiC/C Functionally Gradient Material (FGM) accompanying compositional gradient from SiC…
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