Row hammer

Known as: Rowhammer, Victim row, Maximum activate count 
Row hammer (also written as rowhammer) is an unintended side effect in dynamic random-access memory (DRAM) that causes memory cells to leak their… (More)
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Papers overview

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2019
2019
Through 3D TCAD simulations with single charge traps, we discovered a direct evidence to the mechanism of DRAM row hammer effect… (More)
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2018
2018
Physical Unclonable Functions (PUFs) based on the retention times of the cells of a Dynamic Random Access Memory (DRAM) can be… (More)
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2018
2018
In this paper, we model and investigate the impact of Row Hammering (RH) on Spin-Transfer Torque RAM (STTRAM) by exploiting its… (More)
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2017
2017
This paper presents an alternative to prevent data corruption in DRAM memories due to Row Hammer attacks. The proposal is based… (More)
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2017
2017
Modern DRAM suffers from a new problem called row hammering. The problem is expected to become more severe in future DRAMs mostly… (More)
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2016
2016
Row hammer attacks exploit electrical interactions between neighboring memory cells in high-density dynamic random-access memory… (More)
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2016
2016
In this paper we present a technique that reconstructs the physical location of memory cells in a Dynamic Random Access Memory… (More)
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2015
2015
DDR3 memory is at the heart of almost all cloud computing servers today. A recently publicized failure mechanism in DDR3 memory… (More)
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2015
2015
DRAM scaling has been the prime driver of increasing capacity of main memory systems. Unfortunately, lower technology nodes… (More)
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Highly Cited
2008
Highly Cited
2008
The rotational speeds in high-speed machining and mechanical micromachining are very high. At such high speeds, machine… (More)
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