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Reverse leakage current

Reverse leakage current in a semiconductor device is the current from that semiconductor device when the device is reverse biased. When a… Expand
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
High-performance <tex>$\beta$</tex>-Ga203 vertical trench Schottky barrier diodes (SBDs) are demonstrated on bulk Ga<inf>2</inf>O… Expand
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2016
2016
The activation of ion implanted p-type dopants in GaN is notoriously difficult as the extremely high temperatures required to… Expand
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2015
2015
We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW… Expand
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2013
2013
We report the effect of V-shaped pit size, inverted hexagonal pits embedded in InGaN multiple quantum well, on the reverse… Expand
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Highly Cited
2011
Highly Cited
2011
The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by temperature dependent current–voltage… Expand
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2010
2010
  • Y. Chao, J. Woo
  • IEEE Transactions on Electron Devices
  • 2010
  • Corpus ID: 26065889
This paper shows that germanium n+/p shallow junction formation often results in poor leakage current control. It is due to the… Expand
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Highly Cited
2008
Highly Cited
2008
The forward and reverse bias dc characteristics, the long-term stability under forward and reverse bias, and the reverse recovery… Expand
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Highly Cited
2007
Highly Cited
2007
The current-voltage characteristics of non-punch-through-type diamond Schottky barrier diodes (SBDs) are analyzed by using… Expand
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Highly Cited
2007
Highly Cited
2007
This brief presents a highly integrated wirelessly powered battery charging circuit for miniature lithium (Li)-ion rechargeable… Expand
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Highly Cited
1993
Highly Cited
1993
A simple three-terminal technique for measuring the off-state breakdown voltage of FETs is presented. With the source grounded… Expand
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