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Reverse leakage current

Reverse leakage current in a semiconductor device is the current from that semiconductor device when the device is reverse biased. When a… 
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Related topics

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DiodeSemiconductorThyristorTransistor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Performance limits of optical rectennas
Optical rectennas are antenna-coupled diode rectifiers that receive and convert optical-frequency electromagnetic radiation into… 
2013
2013
Using of GaAs Diode as Gamma Rays Sensor for Dose Rate Measurements
The effect of Gamma-irradiation on the electrical characteristics of GaAs diodes have been investigated using current-voltage (I… 
2011
2011
Post fabrication annealing effects on electrical and optical characteristics of n-ZnO nanorods/p-Si heterojunction diodes
Annealing effects on optical and electrical properties of n-ZnO/p-Si heterojunction diodes are studied. ZnO nanorods are grown on… 
2010
2010
A low voltage CMOS rectifier for wirelessly powered devices
This paper presents a low voltage CMOS full-wave rectifier for wirelessly powered devices. By using a simple comparator… 
2009
2009
Zinc Oxide MESFET Transistors
Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a… 
Highly Cited
2008
Highly Cited
2008
Multilayer white polymer light-emitting diodes with deoxyribonucleic acid-cetyltrimetylammonium complex as a hole-transporting/electron-blocking layer
Using a thin film of deoxyribonucleic acid-cetyltrimetylammonium (DNA-CTMA) complex as a hole-transporting/electron-blocking… 
2008
2008
Wet mesa etching process in InGaN-based light emitting diodes
A photoelectrochemical wet mesa etching (WME) process was used to fabricate InGaN-based light emitting diodes (LEDs) as a… 
2007
2007
Bulk Gallium Nitride Based Electronic Devices: Schottky Diodes, Schottky-Type Ultraviolet Photodetectors and Metal-Oxide-Semiconductor Capacitors
Gallium Nitride (GaN) is one of most promising semiconductor materials for high power, high temperature and high frequency… 
2007
2007
Apparatus for breaking circuit sensing reverse leakage current
A circuit breaker of detecting a reverse leakage current is provided to be returned to an original state immediately when an… 
2005
2005
Superréseaux InAs/GaSb réalisés par épitaxie par jets moléculaires pour photodétection à 300 K dans le moyen-infrarouge
Ce travail de these porte sur l'elaboration, la croissance par epitaxie par jets moleculaires, et la caracterisation de… 
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