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Reverse leakage current

Reverse leakage current in a semiconductor device is the current from that semiconductor device when the device is reverse biased. When a… 
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Related topics

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DiodeSemiconductorThyristorTransistor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Analysis of electrical parameters of InGaN-based LED packages with aging
2014
2014
Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process
In this paper, the application of a novel combined high temperature thermal oxidation and annealing process to mesa-isolated… 
2013
2013
In Situ Investigation of Current Transport Across Pt/n-Si (100) Schottky Junction During 100 $\hbox{MeV Ni}^{+7}$ Ion Irradiation
In situ current-voltage (<i>I</i>-<i>V</i>) analyses of Pt/n-Si (100) Schottky barrier (SB) diode are carried out during 100 MeV… 
2013
2013
Using of GaAs Diode as Gamma Rays Sensor for Dose Rate Measurements
The effect of Gamma-irradiation on the electrical characteristics of GaAs diodes have been investigated using current-voltage (I… 
2010
2010
Germanium $\hbox{n}^{+}/\hbox{p}$ Diodes: A Dilemma Between Shallow Junction Formation and Reverse Leakage Current Control
This paper shows that germanium n+/p shallow junction formation often results in poor leakage current control. It is due to the… 
2010
2010
A low voltage CMOS rectifier for wirelessly powered devices
This paper presents a low voltage CMOS full-wave rectifier for wirelessly powered devices. By using a simple comparator… 
Highly Cited
2008
Highly Cited
2008
Multilayer white polymer light-emitting diodes with deoxyribonucleic acid-cetyltrimetylammonium complex as a hole-transporting/electron-blocking layer
Using a thin film of deoxyribonucleic acid-cetyltrimetylammonium (DNA-CTMA) complex as a hole-transporting/electron-blocking… 
2008
2008
Fabrication and passivation of GaSb photodiodes
2005
2005
Reverse Leakage Current Instability of Power Fast Switching Diodes Operating at High Junction Temperature
Some power electronics applications reveal performance weakness of fast recovery silicon diodes, in spite of significant advance… 
2000
2000
Characteristics of high breakdown voltage Schottky barrier diodes using p+-polycrystalline-silicon diffused-guard-ring
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