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Random Access Memory Device Component
Known as:
RAM
, RAM (Random Access Memory)
, Random Access Memory
A data storage device for which the order of access to different locations does not affect the speed of access. RAM can be both read from and written…
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National Institutes of Health
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Related topics
Related topics
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Memory Device Component
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory
B. Gao
,
Bing Chen
,
+5 authors
Bin Yu
IEEE Transactions on Electron Devices
2013
Corpus ID: 46167710
A novel strategy based on defect engineering is proposed for high-performance multibit data storage in oxide-based resistive…
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Highly Cited
2012
Highly Cited
2012
Journal of Theoretical and Applied Information Technology
A. Diop
2012
Corpus ID: 16149356
A training platform online is an environment that a ffords the conduct of long distance teaching. It’s an online training…
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2012
2012
Memory Speed Analysis of Optical RAM and Optical Flip-Flop Circuits Based on Coupled SOA-MZI Gates
D. Fitsios
,
K. Vyrsokinos
,
A. Miliou
,
N. Pleros
IEEE Journal of Selected Topics in Quantum…
2012
Corpus ID: 35564820
We demonstrate analytical frequency-domain transfer function expressions for an optical random access memory (RAM) cell that…
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Highly Cited
2011
Highly Cited
2011
Low Write-Energy Magnetic Tunnel Junctions for High-Speed Spin-Transfer-Torque MRAM
P. Amiri
,
Zhongming Zeng
,
+9 authors
Kang L. Wang
IEEE Electron Device Letters
2011
Corpus ID: 21124047
This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque…
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2011
2011
Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures
D. Loke
,
Luping P. Shi
,
+6 authors
Y. Yeo
Nanotechnology
2011
Corpus ID: 6990120
Phase-change random access memory cells with superlattice-like (SLL) GeTe/Sb2Te3 were demonstrated to have excellent scaling…
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Highly Cited
2010
Highly Cited
2010
Low power operating bipolar TMO ReRAM for sub 10 nm era
M. Kim
,
I. Baek
,
+13 authors
C. Chung
International Electron Devices Meeting
2010
Corpus ID: 6473222
The bottle neck of ReRAM (Resistive RAM) for post-NAND storage application is high operational current [1,2]. Herein, we report a…
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Highly Cited
2006
Highly Cited
2006
Area-Efficient FIR Filter Design on FPGAs using Distributed Arithmetic
P. Longa
,
A. Miri
IEEE International Symposium on Signal Processing…
2006
Corpus ID: 17039043
In this paper, a highly area-efficient multiplier-less FIR filter is presented. Distributed Arithmetic (DA) has been used to…
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Highly Cited
2004
Highly Cited
2004
Photonic random access memory for 40-Gb/s 16-b burst optical packets
R. Takahashi
,
T. Nakahara
,
+4 authors
H. Suzuki
IEEE Photonics Technology Letters
2004
Corpus ID: 12515331
We present a photonic random access memory (RAM) that can write and read high-speed asynchronous burst optical packets freely by…
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Highly Cited
1987
Highly Cited
1987
Built-In Self-Testing RAM: A Practical Alternative
K. Saluja
,
S. Sng
,
K. Kinoshita
IEEE Design & Test of Computers
1987
Corpus ID: 39195564
The article investigates the design of a built-in self-testing RAM as an economical way, in terms of silicon area overhead, to…
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Highly Cited
1982
Highly Cited
1982
Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memory
K. Ohta
,
K. Yamada
,
K. Shimizu
,
Y. Tarui
IEEE Transactions on Electron Devices
1982
Corpus ID: 25642217
A new one-transistor, one-capacitor RAM cell structure called a Quadruply Self-Aligned Stacked High Capacitance (QSA SHC) RAM is…
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