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Memory Device Component
Known as:
Memory
, Memory Device
Any device that can hold data in machine-readable format.
National Institutes of Health
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Related topics
Related topics
3 relations
Broader (1)
Medical Device Component or Accessory
Random Access Memory Device Component
Read Only Memory Device Component
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2009
Highly Cited
2009
A Comprehensive Study of the Resistive Switching Mechanism in $\hbox{Al/TiO}_{x}/\hbox{TiO}_{2}/\hbox{Al}$-Structured RRAM
Sungho Kim
,
Yang‐Kyu Choi
IEEE Transactions on Electron Devices
2009
Corpus ID: 40630501
The conduction mechanism and resistive switching properties in a resistive-random-access-memory device composed of Al(top)/TiOx…
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Highly Cited
2009
Highly Cited
2009
Non-volatile memory devices based on polystyrene derivatives with electron-donating oligofluorene pendent moieties.
Cheng‐Liang Liu
,
Jung-Ching Hsu
,
Wen‐Chang Chen
,
K. Sugiyama
,
A. Hirao
ACS Applied Materials and Interfaces
2009
Corpus ID: 5471714
We report bistable non-volatile memory devices based on polystyrene derivatives containing pendent electron-donating mono-, di…
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Highly Cited
2008
Highly Cited
2008
Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric
Lijuan Zhen
,
W. Guan
,
Liwei Shang
,
Ming Liu
,
Ge Liu
2008
Corpus ID: 15328058
An all-organic memory device based on a copper phthalocyanine (CuPc) thin-film transistor (TFT) using gold nanocrystals embedded…
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Highly Cited
2007
Highly Cited
2007
Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material
Yan Song
,
Q. Ling
,
+6 authors
Chunxiang Zhu
IEEE Electron Device Letters
2007
Corpus ID: 6339983
We present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold…
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Highly Cited
2006
Highly Cited
2006
PolySi-SiO2-ZrO2-SiO2-Si Flash Memory Incorporating a Sol-Gel-Derived ZrO2 Charge Trapping Layer
T. Hsu
,
H. You
,
F. Ko
,
T. Lei
2006
Corpus ID: 93993921
In this paper, we propose a method for depositing the charge trapping layer of a high-k polySi-SiO 2 -ZrO 2 -SiO 2 -Si (SOZOS…
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Highly Cited
2005
Highly Cited
2005
Probing the size and density of silicon nanocrystals in nanocrystal memory device applications
T. Feng
,
Hongbin Yu
,
M. Dicken
,
J. Heath
,
H. Atwater
2005
Corpus ID: 5614821
Structural characterization via transmission electron microscopy and atomic force microscopy of arrays of small Si nanocrystals…
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Highly Cited
2004
Highly Cited
2004
A low switching voltage organic-on-inorganic heterojunction memory element utilizing a conductive polymer fuse on a doped silicon substrate
Shawn Smith
,
S. Forrest
2004
Corpus ID: 36677738
We present a simple, nonvolatile, write-once-read-many-times (WORM) memory device utilizing an organic-on-inorganic…
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2004
2004
Reasons against the retransfusion of unwashed wound blood
E. Pawlik
2004
Corpus ID: 73131203
Highly Cited
1996
Highly Cited
1996
Room temperature operation of Si single-electron memory with self-aligned floating dot gate
Anri Nakajima
,
T. Futatsugi
,
K. Kosemura
,
Tetsu Fukano
,
Naoki Yokoyama
International Electron Devices Meeting. Technical…
1996
Corpus ID: 41650031
Reports on a new Si single-electron memory device comprised of a narrow channel field effect transistor (FET) having an ultra…
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Highly Cited
1986
Highly Cited
1986
Associative memories based on message-bearing optical modes in phase-conjugate resonators.
A. Yariv
,
S. Kwong
Optics Letters
1986
Corpus ID: 20168917
We describe in generic terms a class of associative memory that is based on (1) an oscillating message-bearing optical mode in a…
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