RMG

RMG's main feature is that it uses real-space mesh as a basis, rather plane waves or other types of basis set functions. This formulation lends… (More)
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Topic mentions per year

Topic mentions per year

1984-2017
0102019842017

Papers overview

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2017
2017
We demonstrate scaled high-Ge-content (HGC) strained SiGe pMOS FinFETs with very high short channel (SC) performance using a… (More)
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2015
2015
We demonstrate a process flow for creating gate-all-around (GAA) Si nanowire (SiNW) MOSFETs with minimal deviation from… (More)
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2015
2015
We demonstrate, for the first time, scaled hybrid inverters built in a 3D Monolithic (3DM) CMOS process featuring short-channel… (More)
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2015
2015
Effect of mobility variation (&#x0394;&#x03BC;<sub>eff</sub>) during NBTI stress is well documented for larger area devices. In… (More)
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2015
2015
A novel RMG process in which the n-type work function metal (nWFM) is deposited first and then selectively removed from the pMOS… (More)
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2014
2014
InGaAs FinFETs fabricated by an unique Si fin replacement process have been demonstrated on 300mm Si substrates. The devices are… (More)
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2014
2014
This work demonstrates the feasibility of an inversion-mode relaxed Ge n-FinFET scaled down to 15-nm fin width and sub-40-nm gate… (More)
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2010
2010
This paper describes an alternative procedure to obtain an equivalent conductor from a bundled conductor, taking into account the… (More)
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2006
2006
A new reaction mechanism generator RMG is used to automatically construct a pressure dependent kinetic model for the steam… (More)
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Review
1999
Review
1999
New renormalization-group algorithms are developed with adaptive representations of the renormalized system which automatically… (More)
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