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RMG

RMG's main feature is that it uses real-space mesh as a basis, rather plane waves or other types of basis set functions. This formulation lends… (More)
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Topic mentions per year

Topic mentions per year

1984-2017
0102019842017

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9 relations
C++11Density functional theoryFFTWFortran
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Related mentions per year

Related mentions per year

1941-2018
19401960198020002020
RMG
Microsoft Windows
Fortran
Density functional theory
Unix
Message Passing Interface

Papers overview

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2017
2017
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
We demonstrate scaled high-Ge-content (HGC) strained SiGe pMOS FinFETs with very high short channel (SC) performance using a… (More)
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2015
2015
Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
We demonstrate a process flow for creating gate-all-around (GAA) Si nanowire (SiNW) MOSFETs with minimal deviation from… (More)
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2015
2015
Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
We demonstrate, for the first time, scaled hybrid inverters built in a 3D Monolithic (3DM) CMOS process featuring short-channel… (More)
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2015
2015
Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI
Effect of mobility variation (&#x0394;&#x03BC;<sub>eff</sub>) during NBTI stress is well documented for larger area devices. In… (More)
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2015
2015
RMG nMOS 1<sup>st</sup> process enabling 10x lower gate resistivity in N7 bulk FinFETs
A novel RMG process in which the n-type work function metal (nWFM) is deposited first and then selectively removed from the pMOS… (More)
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2014
2014
An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates
InGaAs FinFETs fabricated by an unique Si fin replacement process have been demonstrated on 300mm Si substrates. The devices are… (More)
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2014
2014
First demonstration of 15nm-W<inf>FIN</inf> inversion-mode relaxed-Germanium n-FinFETs with Si-cap free RMG and NiSiGe Source/Drain
This work demonstrates the feasibility of an inversion-mode relaxed Ge n-FinFET scaled down to 15-nm fin width and sub-40-nm gate… (More)
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2010
2010
A Model for Bundled Conductors Considering a Non-Homogeneous Distribution of the Current through Subconductors
This paper describes an alternative procedure to obtain an equivalent conductor from a bundled conductor, taking into account the… (More)
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2006
2006
Automatic Reaction Network Generation using RMG for Steam Cracking of n-Hexane
A new reaction mechanism generator RMG is used to automatically construct a pressure dependent kinetic model for the steam… (More)
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Review
1999
Review
1999
Renormalization Multigrid (RMG): Statistically Optimal Renormalization Group Flow and Coarse-to-Fine Monte Carlo Acceleration
New renormalization-group algorithms are developed with adaptive representations of the renormalized system which automatically… (More)
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