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Power Module Device Component
Known as:
Power Module
An independent electronic device designed to supply power to other devices.
National Institutes of Health
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Medical Device Component or Accessory
Papers overview
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2018
2018
A Test Bench for Thermal Characterization of IGBT Power Modules over Mission Profiles
Christoph H. van der Broeck
,
R. D. Doncker
,
Hao Zeng
,
R. Lorenz
2018
Corpus ID: 196160347
The thermal characterization of power electronics modules over realistic mission profiles is crucial for a reliability oriented…
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2016
2016
Gate-Driver with Full Protection for SiC-MOSFET Modules
K. Fink
,
A. Volke
,
W. Wei
,
E. Wiesner
,
E. Thal
2016
Corpus ID: 63708245
This paper is presenting an advanced method of full protection by the gate driver unit for a SiC-MOSFET module using its sense…
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2014
2014
An intelligent power module with high accuracy control system and direct liquid cooling for Hybrid system
Keiichi Higuchi
,
A. Kitamura
,
+4 authors
A. Nishiura
2014
Corpus ID: 111310826
We have developed an intelligent power module (IPM) with high accuracy control system and direct liquid cooling for HEV (Hybrid…
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2012
2012
Design of Underwater Sensor Networks for Water Quality Monitoring
M. Shakir
,
M. Khan
,
S. Malik
2012
Corpus ID: 111187733
Due to the limited bandwidth and large propagation delays experienced in underwater sensor networks, the challenges and planning…
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2012
2012
High Power Density and High Temperature Converter Design for Transportation Applications
Ruxin Wang
2012
Corpus ID: 108980036
2012
2012
Three-phase three-wire active power filter
黄韬
,
丁明进
,
梁晓燕
,
杨轶成
,
钱诗宝
,
刘瑾
2012
Corpus ID: 65321413
The utility model discloses a three-phase three-wire active power filter which comprises a cabinet body and is characterized in…
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2008
2008
Probabilistic approaches and reliability design of power modules
A. Micol
,
Carmen Martin
,
O. Dalverny
,
M. Mermet-Guyennet
,
M. Karama
2008
Corpus ID: 55774045
The weak point for the standard power IGBT modules in terms of reliability is thermal fatigue in solder joints due to the thermal…
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2008
2008
High Temperature , High Power Module Design for Wide Bandgap Semiconductors : Packaging Architecture and Materials Considerations
Z. Shen
,
B. Grummel
,
R. McClure
,
A. Gordon
,
A. Hefner
2008
Corpus ID: 44198856
Wide bandgap power semiconductors such as SiC or GaN can safely operate at a junction temperature of 500°C. Such a high operating…
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2007
2007
Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high frequency and very compact three-phase sinusoidal input rectifiers
S. Bontemps
,
A. Calmels
,
S. Round
,
J. Kolar
2007
Corpus ID: 195177674
This paper focuses on the advantages of low profile and therefore low inductance power modules to achieve very compact power…
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1993
1993
LOW JITTER OPERATION OF A PLASMA OPENING SWITCH
D. Kortbawi
,
J. Goyer
,
F. K. Childers
,
P. Sincerny
Ninth IEEE International Pulsed Power Conference
1993
Corpus ID: 3080989
Low throughput jitter is crucial to the construction of modular pulsed power systems. Recently, the causes of throughput jitter…
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