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Negative luminescence

Negative luminescence is a physical phenomenon by which an electronic device emits less thermal radiation when an electric current is passed through… 
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C. Thomas ElliottDiodeSemiconductor

Papers overview

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2015
2015
Negative Differential Resistance in Dense Short Wave Infrared HgCdTe Planar Photodiode Arrays
A novel room-temperature negative differential resistance (NDR) effect is proposed, theoretically analyzed, and quantitatively… 
2007
2007
Recent advances in negative luminescent technologies
Negative luminescent (NL) devices, which to an IR observer can appear colder than they actually are, have a wide range of… 
2006
2006
Positive and negative luminescence in binary type II InAs/GaSb superlattice photodiodes
Recently, several groups have investigated the aspects of positive and negative luminescence behavior in infrared materials… 
2005
2005
Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes
The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been… 
2005
2005
Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-/spl mu/m cutoff wavelengths
We demonstrate the substantial suppression of infrared (IR) blackbody emission from HgCdTe photodiode arrays with cutoff… 
2004
2004
Infrared negative luminescent devices and higher operating temperature detectors
Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an… 
2003
2003
Perspectives on dynamic infrared scene projection using positive and negative luminescence
A dynamic infrared scene projector based on IR luminescent devices has many potential advantages compared with existing systems… 
2001
2001
4 μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20-180°C
Negative luminescence (NL) operation at ∼4 μm is reported for p-InAsSbP/n-InAs reverse biased diodes with efficiency of about 60… 
2001
2001
Negative luminescence from InAsSbP-based diodes in the 4.0- to 4.3-μm range
Negative luminescence (NL) operation at ∼4 µm for p-InAsSbP/n-InAs and 4÷5 µm for p-InAsSb/n-InAsSb(P) diodes with FWHM∼0.1⋅λmax… 
2001
2001
4-μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C
Negative luminescence (NL) operation at approximately 4 micrometer is reported for p-InAsSbP/n-InAs reverse biased diodes with… 
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