NQS

NQS - Non-Quasi Static model - is a transistor model used in analogue/mixed signal IC design. It becomes necessary to use an NQS model when the… (More)
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Topic mentions per year

Topic mentions per year

1986-2017
024619862017

Papers overview

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2016
2016
The state-of-the-art and π-models for the lateral non-quasi-static (NQS) effect are analyzed. The superiority of the π-model to… (More)
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2015
2015
A simple numerical technique is developed to solve the non-quasi-static (NQS) differential equation of the PSP MOSFET model. The… (More)
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2014
2014
Detailed formulations for DC and AC emitter current crowding are presented in view of developing an extended π-equivalent circuit… (More)
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2011
2011
This paper deals with enhancement of a PN diode standard model towards including substrate PN junction, and reverse recovery… (More)
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2010
2010
Time-dependent quantum simulations are used to rigorously identify non-quasi-static (NQS) effects in Carbon nanotube transistors… (More)
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2008
2008
This paper presents a novel Verilog-A model that implements an idealized frequency dependent phase shift (excess-phase) in the… (More)
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2006
2006
Channel segments approach is used to investigate NQS (non-quasi-static) effect on MOSFET's behavior. For the first time, NQS… (More)
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2005
2005
This paper presents a physical charge-based compact small-signal nonquasi-static (NQS) model for MOST, including velocity… (More)
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2004
2004
Predictive compact models have been developed to describe NQS effects and thermal noise in Intel's 90nm radio-frequency (RF) CMOS… (More)
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Review
2003
Review
2003
Large-signal implementation of non-quasistatic (NQS) effects in bipolar transistors is reviewed. An approach strategy is proposed… (More)
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