A high-frequency nonquasi-static analytical model including gate leakage effects for on-chip decoupling capacitors

@article{Rius2006AHN,
  title={A high-frequency nonquasi-static analytical model including gate leakage effects for on-chip decoupling capacitors},
  author={Josep Rius and Madelon Meijer},
  journal={IEEE Transactions on Advanced Packaging},
  year={2006},
  volume={29},
  pages={88-97}
}
This paper presents a compact model for on-chip decoupling capacitors (decaps) including gate-oxide leakage. The model makes use of only four parameters, namely, channel resistance, gate-oxide capacitance, and two parameters to quantify gate-oxide leakage, to predict the static and dynamic response of decaps. Quality indices have been defined to enable development of decap design guidelines and evaluation of performance of such capacitors. The model shows how the gate leakage and longer channel… CONTINUE READING
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