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Metal gate

A metal gate, in the context of a lateral Metal-Oxide-Semiconductor MOS stack, is just that—the gate material is made from a metal. For decades (i.e… 
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2008
2008
SOI vs. bulk FinFET: Body doping and corner effects influence on device characteristics
SOI and bulk FinFET were analyzed by a three-dimensional numerical device simulator and their electrical characteristics were… 
Highly Cited
2007
Highly Cited
2007
Control and Detection of Organosilane Polarization on Nanowire Field-Effect Transistors
We demonstrated control and detection of UV-induced 3-aminopropyltriethoxysilane (APTES) polarization using silicon nanowire… 
Highly Cited
2006
Highly Cited
2006
Challenges and Opportunities for High Performance 32 nm CMOS Technology
Starting with the 45 nm node, a tradeoff between performance and density exists that become more severe at the 32 nm node. An in… 
2006
2006
A Novel Electrode-Induced Strain Engineering for High Performance SOI FinFET utilizing Si (1hannel for Both N and PMOSFETs
If Si (110) channel can be used for both nMOS and pMOS FinFET, the implementation of FinFET can be simplified significantly… 
Highly Cited
2006
Highly Cited
2006
Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer
In this letter, we studied the effects of post-deposition anneal (PDA) time and Si interface control layer (ICL) on the… 
2005
2005
Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate
This paper demonstrates the successful integration of Schottky barrier (SB) MOSFETs that feature platinum silicide (PtSi) source… 
Highly Cited
2004
Highly Cited
2004
Quantum transport through short semiconducting nanotubes: A complex band structure analysis
With a recently developed ab initio nonequilibrium Green's function formalism, we have examined the problem of quantum transport… 
Highly Cited
2004
Highly Cited
2004
Dynamics of trapped charge in GaN/AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy
We report on the dynamics of trapped charge in unpassivated GaN/AlGaN/GaN high electron mobility transistors grown by plasma… 
Highly Cited
2000
Highly Cited
2000
Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)
  • B. LeeR. Choi J. Lee
  • International Electron Devices Meeting…
  • 2000
  • Corpus ID: 56269695
MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films… 
Highly Cited
1978
Highly Cited
1978
Methods for Hierarchical Automatic Layout of Custom LSI Circuit Masks
A new automatic IC mask layout code is described which avoids most of the problems inherent in the present generation of layout… 
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