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Metal gate

A metal gate, in the context of a lateral Metal-Oxide-Semiconductor MOS stack, is just that—the gate material is made from a metal. For decades (i.e… 
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2013
Highly Cited
2013
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
The impact of gate metals on the threshold voltage (VTH) and the gate current of p-GaN gate high-electron-mobility transistors… 
Highly Cited
2011
Highly Cited
2011
Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation
The effective work function of a reactively sputtered TiN metal gate is shown to be tunable from 4.30 to 4.65 eV. The effective… 
Highly Cited
2011
Highly Cited
2011
The evolution of scaling from the homogeneous era to the heterogeneous era
Traditional MOSFET scaling served our industry well for more than three decades by providing continuous improvements in… 
Highly Cited
2008
Highly Cited
2008
FDSOI devices with thin BOX and ground plane integration for 32nm node and below
Highly Cited
2006
Highly Cited
2006
Silicon Vertically Integrated Nanowire Field Effect Transistors
Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub… 
Highly Cited
2006
Highly Cited
2006
Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering
We have combined the benefits of the fully depleted tri-gate transistor architecture with high-k gate dielectrics, metal gate… 
Review
2005
Review
2005
The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance
The rapid cadence of metal-oxide semiconductor field-effect transistor (MOSFET) scaling, as seen in the new 2003 International… 
Highly Cited
2005
Highly Cited
2005
Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor
Reference NANOLAB-CONF-2005-019View record in Web of Science Record created on 2007-05-16, modified on 2017-05-10 
Highly Cited
2001
Highly Cited
2001
Dual work function metal gate CMOS technology using metal interdiffusion
In this letter, we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve low threshold… 
Highly Cited
2000
Highly Cited
2000
High breakdown GaN HEMT with overlapping gate structure
GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge… 
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