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MOSI protocol

Known as: MOSI 
The MOSI protocol is an extension of the basic MSI cache coherency protocol. It adds the Owned state, which indicates that the current processor owns… 
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Related topics

Related topics

7 relations
Bus snoopingCache coherenceMESI protocolMESIF protocol

Papers overview

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2014
2014
Application of EB repair for high durable MoSi PSM
Recently there has been a demand for high durability MoSi masks. There are some candidates for MoSi mask materials. They are… 
2011
2011
Current status of EUV mask blanks and LTEM substrates defectivity and cleaning of blanks exposed in EUV ADT
The defectivity of EUV mask blanks remains as one of the key challenges in EUV lithography. Mask blank defects are a combination… 
2011
2011
Evaluation of KLA-Tencor LMS IPRO5 beta system for 22nm node registration and overlay applications
Using various technical tricks, 193nm lithography has been pushed for the 22nm logic node. For optical and EUV lithography, the… 
2008
2008
Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication
During the development of optical lithography extensions for 32nm, both binary and attenuated phase shift Reticle Enhancement… 
2006
2006
High transmission mask technology for 45nm node imaging
Today novel RET solutions are gaining more and more attention from the lithography community that is facing new challenges in… 
2002
2002
The antiquity of leprosy in Britain : the skeletal evidence.
Leprosy has hIId • long history in Britain and ycC most of the evidence comprises historical documentation and ioooographic… 
2001
2001
Abundância relativa e distribuição de Loricariichthys spixii (Steindachner) (Siluriformes, Loricariidae) no reservatório de Lajes, Estado do Rio de Janeiro, Brasil
The armored catfish Loricariichthys spixii (Steindachner, 1882) is the most abundant member of the Loricariidae family in the… 
Highly Cited
1993
Highly Cited
1993
Evidence for self-sustained MoSi_2 formation during room-temperature high-energy ball milling of elemental powders
We present evidence indicating that rapid, self-sustained, high-temperature reactions play an important role in the formation of… 
1984
1984
A 28ns CMOS SRAM with bipolar sense amplifiers
This report will discuss a 64K×1 SRAM with bipolar sense amplifiers, utilizing both CMOS and bipolar devices with double poly 1.2… 
1981
1981
Edge-defined patterning of hyperfine refractory metal silicide MOS structures
Edge-defined patterning was used to obtain hyperfine (< ¼ µm) refractory metal silicide MOS structures. A patterning technique… 
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