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Lumbar disc disease
Known as:
LDD
, disc disease lumbar
, disease lumbar disc
National Institutes of Health
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Related topics
Related topics
7 relations
Discitis
Disk, Herniated
Intervertebral Disk Displacement
Lumbar disc lesion
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Broader (1)
Intervertebral disc disorder
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2000
Highly Cited
2000
Efficient Monte Carlo device modeling
F. M. Bufler
,
A. Schenk
,
W. Fichtner
2000
Corpus ID: 16416749
A single-particle approach to full-band Monte Carlo device simulation is presented which allows an efficient computation of drain…
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Highly Cited
1999
Highly Cited
1999
Thoracic disc herniation mimicking acute lumbar disc disease.
Rong‐Kuo Lyu
,
Hong‐Shiu Chang
,
Lok‐Ming Tang
,
Sien‐Tsong Chen
Spine
1999
Corpus ID: 42714714
STUDY DESIGN Case report of a 49-year-old woman with a lower thoracic disc herniation mimicking acute lumbosacral radiculopathy…
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1990
1990
A self-aligned elevated source/drain MOSFET
J. Pfiester
,
R. Sivan
,
H. M. Liaw
,
C. Seelbach
,
C. Gunderson
IEEE Electron Device Letters
1990
Corpus ID: 33203935
An advanced elevated source/drain CMOS process which features self-aligned lightly-doped drain (LDD) and channel implantation is…
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Highly Cited
1987
Highly Cited
1987
Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's
G. J. Hu
,
Chi Chang
,
Yu-Tai Chia
IEEE Transactions on Electron Devices
1987
Corpus ID: 1924987
A measurement algorithm to extract the effective channel length and source-drain series resistance of MOSFET's is presented. This…
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Highly Cited
1987
Highly Cited
1987
A model for the electric field in lightly doped drain structures
K. Mayaram
,
Jack C. Lee
,
Chenming Hu
IEEE Transactions on Electron Devices
1987
Corpus ID: 20430596
A semi-quantitative model for the lateral channel electric field in LDD MOSFET's has been developed. This model is derived from a…
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Highly Cited
1986
Highly Cited
1986
On the accuracy of channel length characterization of LDD MOSFET's
J. Sun
,
M. Wordeman
,
S. Laux
IEEE Transactions on Electron Devices
1986
Corpus ID: 26860109
A comprehensive investigation into the various mechanisms that limit the accuracy of channel length extraction techniques for…
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Highly Cited
1984
Highly Cited
1984
A capacitance method to determine channel lengths for conventional and LDD MOSFET's
B. Sheu
,
P. Ko
IEEE Electron Device Letters
1984
Corpus ID: 24312571
A simple method for determining the channel length and in situ gate-oxide thickness of MOSFETs is described. The method is based…
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Highly Cited
1984
Highly Cited
1984
A simple method to determine channel widths for conventional and LDD MOSFET's
B. Sheu
,
P. Ko
IEEE Electron Device Letters
1984
Corpus ID: 13021415
A new method to determine the channel widths and in situ gate-oxide thicknesses of conventional and LDD MOSFET's is described…
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Highly Cited
1984
Highly Cited
1984
Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET's
S. Laux
IEEE Transactions on Electron Devices
1984
Corpus ID: 10562560
The accuracy of an effective channel length/external resistance extraction algorithm for MOSFET's is assessed. This is…
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Highly Cited
1982
Highly Cited
1982
Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology
P. J. Tsang
,
S. Ogura
,
W. Walker
,
J. Shepard
,
D. Critchlow
IEEE Transactions on Electron Devices
1982
Corpus ID: 27860057
A fabrication process for the Lightly Doped Drain/Source Field-Effect Transistor, LDDFET, that utilizes RIE produced SiO2sidewall…
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