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International System of Units

Known as: SI Unit, Modern Metric System, Units, SI 
The International System of Units (Systeme International d'Unites, SI) is a decimal system of weights and measures derived from and extending the… 
National Institutes of Health

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Highly Cited
2004
Highly Cited
2004
Carbon nanotube transistor operation at 2.6 Ghz
We present the first demonstration of single-walled carbon nanotube transistor operation at microwave frequencies. To measure the… 
Highly Cited
1996
Highly Cited
1996
Quantum confined luminescence in Si/SiO2 superlattices.
Abstract Amorphous Si/SiO2 superlattices with periodicities between 2 and 5 nm have now been grown on (1 00) Si wafers by several… 
Highly Cited
1991
Highly Cited
1991
Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells.
We report the luminescence from excitons confined in fully strained SiGe quantum wells. At liquid-He temperatures the… 
Highly Cited
1991
Highly Cited
1991
Tantalum‐based diffusion barriers in Si/Cu VLSI metallizations
We have studied sputter-deposited Ta, Ta36Si14, and Ta36Si14N50 thin films as diffusion barriers between Cu overlayers and Si… 
Highly Cited
1991
Highly Cited
1991
Evidence of pairing and its role in the recombinative desorption of hydrogen from the Si(100)-2 x 1 surface.
A scanning tunneling microscopy and spectroscopy study of the recombinative desorption of hydrogen from the Si(100)-2\ifmmode… 
Highly Cited
1990
Highly Cited
1990
Coupling of an adsorbate vibration to a substrate surface phonon: H on Si(111).
We report high-resolution infrared--reflection-absorption measurements of an unreconstructed, ideally H-terminated Si(111… 
Highly Cited
1989
Highly Cited
1989
Correlation of the 5.0- and 7.6-eV absorption bands in SiO2 with oxygen vacancy.
Various uv and vacuum-uv optical-absorption bands found in as-manufactured high-purity ${\mathrm{SiO}}_{2}$ glass were studied… 
Highly Cited
1988
Highly Cited
1988
Atom-resolved surface chemistry using scanning tunneling microscopy.
We use scanning tunneling microscopy to investigate the reactivity of the dangling-bond states of Si(111)-(7\ifmmode\times\else… 
Highly Cited
1987
Highly Cited
1987
Structurally induced optical transitions in Ge-Si superlattices.
Par spectroscopie d'electroreflectance, observation de nouvelles transitions vers 0,76, 1,25 et 2,31 eV dans des superreseaux Ge… 
Highly Cited
1985
Highly Cited
1985
Semiconductor cluster beams: One and two color ionization studies of Six and Gex
Supersonic beams of clusters of Si and Ge atoms have been produced by laser vaporization followed by supersonic expansion in a… 
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