Skip to search formSkip to main content
You are currently offline. Some features of the site may not work correctly.

Indium gallium zinc oxide

Known as: IGZO, IZGO 
Indium gallium zinc oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O). IGZO thin-film… Expand
Wikipedia

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
This letter reports the fabrication of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs… Expand
  • figure 1
  • figure 2
  • figure 3
  • table I
  • figure 4
Is this relevant?
2015
2015
Abstract We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of… Expand
  • figure 1
  • figure 2
  • figure 5
  • figure 3
  • figure 4
Is this relevant?
2014
2014
The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous… Expand
  • figure 1
  • figure 3
Is this relevant?
Highly Cited
2012
Highly Cited
2012
This work was supported by the State Key Program for Basic Research of China under Grant Nos. 2010CB327504, 2011CB922100… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 5
  • figure 4
Is this relevant?
Highly Cited
2012
Highly Cited
2012
Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with high performance were… Expand
  • figure 1
  • figure 2
  • table I
  • figure 4
  • figure 3
Is this relevant?
Highly Cited
2011
Highly Cited
2011
Circuits implemented with high-performance amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) are realized on… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
Is this relevant?
Highly Cited
2011
Highly Cited
2011
The electrical characteristics and stability of dual-gate (DG) coplanar homojunction amorphous indium-gallium-zinc-oxide thin… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • table I
Is this relevant?
Highly Cited
2010
Highly Cited
2010
The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti… Expand
  • figure 1
  • figure 2
  • figure 4
  • figure 3
Is this relevant?
Highly Cited
2010
Highly Cited
2010
We describe the fabrication and characterization of visible transparent small-scale indium gallium zinc oxide (IGZO) integrated… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
Is this relevant?
Highly Cited
2008
Highly Cited
2008
The effect of water exposure on amorphous indium-gallium-zinc oxide (a-IGZO) semiconductors was reported. It was found that water… Expand
  • figure 2
  • figure 1
  • table I
Is this relevant?