Indium gallium zinc oxide

Known as: IGZO, IZGO 
Indium gallium zinc oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O). IGZO thin-film… (More)
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Topic mentions per year

Topic mentions per year

1999-2017
05010019992017

Papers overview

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2017
2017
This letter demonstrates a high-mobility amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) with aluminum… (More)
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2016
2016
In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm… (More)
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2016
2016
Despite being one of the most promising amorphous semiconductors, indium-gallium-zinc oxide (IGZO) has been mostly studied in… (More)
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2015
2015
We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO… (More)
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2015
2015
Gas sensors with good performance should exhibit characteristics such as high sensitivity, low energy consumption, and low… (More)
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2013
2013
We report temperature sensors with amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The threshold… (More)
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2011
2011
Circuits implemented with high-performance amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) are realized on… (More)
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2011
2011
Thin-film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) active layer and anodic aluminum oxide (Al<sub>2</sub>O… (More)
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2009
2009
In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film… (More)
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2007
2007
The fabrication of high performance amorphous indium gallium zinc oxide (IGZO) transparent thin film transistors (TTFT) and their… (More)
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