Skip to search formSkip to main contentSkip to account menu

Indium gallium zinc oxide

Known as: IGZO, IZGO 
Indium gallium zinc oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O). IGZO thin-film… 
Wikipedia (opens in a new tab)

Related topics

Related topics

12 relations
BackplaneElectron mobilityElectronic paperLiquid-crystal display

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Amorphous indium gallium zinc oxide thin film-based ozone sensors
Gas sensors with good performance should exhibit characteristics such as high sensitivity, low energy consumption, and low… 
2015
2015
A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiNx coupled junction
We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250… 
2013
2013
A possibility of crystalline Indium-Gallium-Zinc-Oxide
Crystalline IGZO thin films were first used in consumer products successfully by a joint development with Sharp Corporation. The… 
2013
2013
Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate
A polycrystalline silicon (poly-Si) channel twin thin-film transistor (twin-TFT) nonvolatile memory (NVM) device with In-Ga-Zn-O… 
Highly Cited
2011
Highly Cited
2011
Environment-dependent thermal instability of sol-gel derived amorphous indium- gallium-zinc-oxide thin film transistors
The environment-dependent electrical performances as a function of temperature for sol-gel derived amorphous indium-gallium-zinc… 
Highly Cited
2010
Highly Cited
2010
Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors
We describe the fabrication and characterization of visible transparent small-scale indium gallium zinc oxide (IGZO) integrated… 
2010
2010
The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress
The threshold voltage instability (Vth) in indium-gallium-zinc oxide thin film transistor was investigated with disparate SiNx… 
2010
2010
Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer
This letter introduces a polycrystalline silicon (poly-Si) thin-film nonvolatile memory (NVM) with a nanocrystal (NC) indium… 
2009
2009
An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel
In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film… 
2007
2007
High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material
The fabrication of high performance amorphous indium gallium zinc oxide (IGZO) transparent thin film transistors (TTFT) and their… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)