Skip to search formSkip to main contentSkip to account menu

Hybrid fibre-optic

Known as: HFO 
Hybrid fibre-optic is the connection used by some television studio and field production video cameras that combine all video, audio, data, control… 
Wikipedia (opens in a new tab)

Related topics

Related topics

1 relation
Optical fiber

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2009
Highly Cited
2009
Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization
A novel gate first integration approach enabling ultra low-EOT is demonstrated. HfO<sub>2</sub> based devices with a zero… 
Highly Cited
2006
Highly Cited
2006
High-performance poly-silicon TFTs using HfO/sub 2/ gate dielectric
High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-/spl kappa/ (HfO/sub 2/) gate dielectric is… 
Highly Cited
2004
Highly Cited
2004
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2… 
Highly Cited
2004
Highly Cited
2004
Fermi pinning-induced thermal instability of metal-gate work functions
The dependence of the metal-gate work function on the annealing temperature is experimentally studied. We observe increased Fermi… 
Highly Cited
2004
Highly Cited
2004
A TaN-HfO/sub 2/-Ge pMOSFET with NovelSiH/sub 4/ surface passivation
In this letter, we demonstrate a novel surface passivation process for HfO/sub 2/ Ge pMOSFETs using SiH/sub 4/ surface annealing… 
Highly Cited
2003
Highly Cited
2003
Theoretical and experimental investigation of Si nanocrystal memory device with HfO/sub 2/ high-k tunneling dielectric
This paper describes improved memory characteristics of the Si nanocrystal memory devices by replacing the traditional SiO/sub 2… 
2003
2003
Effect of bulk trap density on HfO/sub 2/ reliability and yield
The trap density in an ALD SiO/sub 2//HfO/sub 2/ stack is measured with charge pumping. A critical trap density at breakdown is… 
2002
2002
Additional scattering effects for mobility degradation in Hf-silicate gate MISFETs
By controlling the crystallization in Hf-silicate gate dielectrics, we directly observed that the crystallized-HfO/sub 2… 
Highly Cited
2002
Highly Cited
2002
Structural and electrical properties of HfO2 with top nitrogen incorporated layer
A novel technique to control the nitrogen profile in HfO/sub 2/ gate dielectric was developed using a reactive sputtering method… 
Highly Cited
2001
Highly Cited
2001
Performance and reliability of ultra thin CVD HfO/sub 2/ gate dielectrics with dual poly-Si gate electrodes
MOSFETs with high quality ultra thin (EOT/spl sim/10.3 /spl Aring/) HfO/sub 2/ gate stacks and self-aligned dual poly-Si gate are… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)