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Homojunction
Known as:
Junction
A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material, these materials have equal band gaps but…
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Related topics
Related topics
9 relations
Acceptor (semiconductors)
Band bending
Depletion region
Donor (semiconductors)
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Electric Double Layer Esaki Tunnel Junction in a 40-nm-Length, WSe2 Channel Grown by Molecular Beam Epitaxy on Al203
P. Paletti
,
A. Seabaugh
,
Ruoyu Yue
,
C. Hinkle
European Solid-State Device Research Conference
2018
Corpus ID: 52966293
An electric-double-layer (EDL) Esaki junction is demonstrated for the first time in a molecular beam epitaxy-grown WSe2 thin-film…
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2015
2015
Exploiting Hetero-Junctions to Improve the Performance of III–V Nanowire Tunnel-FETs
M. Pala
,
Sylvan Brocard
IEEE Journal of the Electron Devices Society
2015
Corpus ID: 31325499
This paper presents full-quantum 3-D simulations predicting the electrical performance of nanowire tunnel-FETs based on III-V…
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2013
2013
Application of Si Nanowires Fabricated by Metal-Assisted Etching to Crystalline Si Solar Cells
M. Kulakçı
,
F. Es
,
B. Ozdemir
,
H. Unalan
,
R. Turan
IEEE Journal of Photovoltaics
2013
Corpus ID: 1611425
Reflection and transmission through a solar cell can be significantly reduced using light-trapping structures. This approach can…
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2010
2010
HgCdTe APD-focal plane array development at DEFIR
J. Rothman
,
E. de Borniol
,
+6 authors
X. Lefoule
Security + Defence
2010
Corpus ID: 54589371
We report our latest development of HgCdTe electron avalanche photodiode (e-APD) with Cd compositions between 0.3 to 0.41…
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2009
2009
Multispectral EO/IR sensor model for evaluating UV, visible, SWIR, MWIR and LWIR system performance
A. Sood
,
Robert A. Richwine
,
Y. Puri
,
N. Dhar
,
D. Polla
,
P. Wijewarnasuriya
Defense + Commercial Sensing
2009
Corpus ID: 122031973
Next Generation EO/IR Sensors using Nanostructures are being developed for a variety of Defense Applications. In addition, large…
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2007
2007
A theoretical study on the transport property of the La0.7Sr0.3MnO3/Si p-n heterojunction
J. Qiu
,
K. Jin
,
+4 authors
Guo‐zhen Yang
2007
Corpus ID: 56106556
The transport property of the La0.7Sr03MnO3/Si heterostructure was investigated theoretically by applying the drift-diffusion…
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1998
1998
High efficiency Cu(In,Ga)Se{sub 2} thin film solar cells without intermediate buffer layers
K. Ramanathan
,
H. Wiesner
,
+5 authors
R. Noufi
1998
Corpus ID: 73630939
The nature of the interface between CuInGaSe2 (CIGS) and the chemical bath deposited CdS layer has been investigated. We show…
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Highly Cited
1993
Highly Cited
1993
Visible light emission from heavily doped porous silicon homojunction pn diodes
Zhiliang Chen
,
G. Bosman
,
R. Ochoa
1993
Corpus ID: 205133783
We observed visible light emission with a peak wavelength of 640 nm from forward biased, heavily doped porous silicon…
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1986
1986
Defective Heterojunction Models
J. Freeouf
,
J. Woodall
1986
Corpus ID: 50700339
1981
1981
GaAs shallow-homojunction solar cells
J. Fan
1981
Corpus ID: 108604468
The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for…
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