Homojunction

A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material, these materials have equal band gaps but… (More)
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Topic mentions per year

1975-2018
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Papers overview

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2015
2015
We report a homojunction gallium nitride (GaN) p-i-n rectifier fabricated on free-standing GaN substrates with the breakdown… (More)
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2015
2015
In this paper, we study the ambipolar tunneling signature from the output characteristics of TFETs featuring Si<sub>0.8</sub>Ge… (More)
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2014
2014
A simple method of fabricating fully self-aligned double-gate (SADG) homojunction a-IGZO TFTs is proposed and experimentally… (More)
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2013
2013
An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen… (More)
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1999
1999
The concept of homojunction infernal photoemission far-infrared (FIR) detectors has been successfully demonstrated using forward… (More)
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1998
1998
A 48 mm cutoff wavelength (lc) Si far-infrared ~FIR! detector is demonstrated. Internal photoemission over a Si interfacial work… (More)
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1997
1997
We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the… (More)
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1997
1997
A molecular beam epitaxy grown wavelength tunable GaAs p-i homojunction interfacial work-function internal photoemission far… (More)
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1996
1996
Rapid vapor-phase doping (RVD) provides very shallow and abrupt boron profiles. A cutoff-frequency of 100 GHz was achieved with a… (More)
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1980
1980
The superposition principle for solar cells states that the current flowing in an illuminated cell subject to a forward bias<tex… (More)
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