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High Bandwidth Memory
Known as:
HBM 2
, HBM2
, HBM
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High Bandwidth Memory (HBM) is a high-performance RAM interface for 3D-stacked DRAM from AMD and Hynix. It is to be used in conjunction with high…
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25 relations
AMD Radeon 400 series
Die (integrated circuit)
Dynamic random-access memory
GeForce 10 series
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Broader (1)
Computer memory
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2012
2012
A relationship between three analytical approaches to nonlinear problems
Ahmet Yildirim
,
Ahmet Yildirim
,
H. Askari
,
M. K. Yazdi
,
Y. Khan
Applied Mathematics Letters
2012
Corpus ID: 3918670
2007
2007
A Simple and Useful Layout Scheme to Achieve Uniform Current Distribution for Multi-Finger Silicided Grounded-Gate NMOS
Jian-Hsing Lee
,
Yi-Hsun Wu
,
Chin-Hsin Tang
,
Ta-Chih Peng
,
Shui-Hung Chen
,
A. Oates
IEEE International Reliability Physics Symposium…
2007
Corpus ID: 21504141
The influence of the contact-to-contact space on the ESD performance of multi-finger silicided ground-gate NMOS (GGNMOS) is…
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2007
2007
Qualification and Reliability of a GaN Process Platform
S. Singhal
,
A. Chaudhari
,
P. Rajagopal
,
T. Li
,
W. Nagy
,
R. Therrien
2007
Corpus ID: 15315169
In this paper, the qualification of a production GaN process platform is discussed. Details of the process repeatability…
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2004
2004
A 5 GHz CMOS low-noise amplifier with inductive ESD protection exceeding 3 kV HBM
P. Leroux
,
M. Steyaert
Proceedings of the 30th European Solid-State…
2004
Corpus ID: 27330242
This work presents a 5 GHz LNA with on-chip ESD-protection provided by an integrated inductor. The circuit is implemented in a…
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Highly Cited
2002
Highly Cited
2002
New considerations for MOSFET power clamps
S. Poon
,
T. Maloney
Electrical Overstress/Electrostatic Discharge…
2002
Corpus ID: 21360218
2002
2002
A packaged 2.4 GHz LNA in a 0.15µm CMOS process with 2kV HBM ESD protection
V. Chandrasekhar
,
C. Hung
,
Y. Ho
,
K. Mayaram
Proceedings of the 28th European Solid-State…
2002
Corpus ID: 30887884
This paper presents the first 2.4 GHz LNA with 2kV HBM ESD protection integrated in a 0.15 µm CMOS process. The LNA has been…
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Highly Cited
2000
Highly Cited
2000
Design on the low-leakage diode string for using in the power-rail ESD clamp circuits in a 0.35-/spl mu/m silicide CMOS process
M. Ker
,
Wen-Yu Lo
IEEE Journal of Solid-State Circuits
2000
Corpus ID: 21261306
A new design of the diode string with very low leakage current is proposed for use in the ESD clamp circuits across the power…
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1998
1998
A study of ESD sensitivity in AMR and GMR recording heads
C. F. Lam
,
C. Chang
,
R. Karimi
Electrical Overstress/ Electrostatic Discharge…
1998
Corpus ID: 41385944
In this paper, the behaviour of giant magnetoresistive (GMR) recording devices "zapped" with increasing human body model (HBM…
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1997
1997
Standardized ESD Testing Of Magnetoresistive Recording Heads
A. Wallash
IEEE International Magnetics Conference
1997
Corpus ID: 8226125
A methodology and apparatus are described for completely characterizing the electrostatic discharge (ESD) sensitivity of…
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Highly Cited
1995
Highly Cited
1995
Sub-micron chip ESD protection schemes which avoid avalanching junctions
E. Worley
,
R. Gupta
,
B. Jones
,
R. Kjar
,
C. Nguyen
,
M. Tennyson
Electrical Overstress/Electrostatic Discharge…
1995
Corpus ID: 20091187
Because of leakage problems related to avalanche breakdown of salicided junctions, an array of ESD protection methods has been…
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