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Hemoglobin F-Poole

National Institutes of Health

Papers overview

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Highly Cited
2013
Highly Cited
2013
The gate leakage mechanisms in AlInN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are compared using temperature… 
Highly Cited
2013
Highly Cited
2013
A deeper understanding of the noise and variability sources in resistive switching memory (RRAM) is needed for device improvement… 
Review
2011
Review
2011
van Nieukerken, Erik J.; Kaila, Lauri; Kitching, Ian J.; Kristensen, Niels Peder; Lees, David C.; Minet, Joël; Mitter, Charles… 
Highly Cited
2008
Highly Cited
2008
Financial support was provided by Interministerial Commission of Science and Technology (nos. AGL2002-04219, AGL2003-01999, and… 
Highly Cited
2007
Highly Cited
2007
In this paper, bottom-oxide thickness (Tbo) and program/erase stress effects on charge retention in SONOS Flash memory cells with… 
2007
2007
The rebel war in Sierra Leone has been given various characterisations. One of the most commonplace of them brands it a… 
Highly Cited
2001
Highly Cited
2001
  • W. Tsai, N. Zous, S. Gu
  • International Electron Devices Meeting. Technical…
  • 2001
  • Corpus ID: 34486471
Data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase are… 
Highly Cited
1985
Highly Cited
1985
Two forms of interleukin 1 (IL-1) were purified to homogeneity from the culture supernatants of pig buffy coat leukocytes…