Semantic Scholar uses AI to extract papers important to this topic.
Broadband Darlington amplifiers using a GaAs heterojunction bipolar transistor (HBT) high electron-mobility transistor (HEMT… Expand In0.5(Al0.3Ga0.7)0.5P/GaAs heterojunction bipolar transistors (HBTs) are demonstrated as an alternative to AlGaAs/GaAs and InGaP… Expand Estrogen and progesterone are key regulators of normal breast epithelial cell proliferation and differentiation. They are also… Expand Current microwave systems are constructed by integrating a large number of single technology components into a final product due… Expand This paper presents the first attempt to analyze low frequency noise of InP/GaAsSb/InP HBT compare with InP/InGaAs/InP HBT one… Expand The gold standard for diagnosing lactose malabsorption is the H2 hydrogen breath test (HBT). Different methods of HBT have been… Expand Vitesse has developed an indium phosphide (InP) heterojunction bipolar transistor (HBT) process and used that process for the… Expand This paper describes the first InAlAs/InGaAs-InP HBT MMIC power amplifier results reported for frequencies above 20 GHz. The MMIC… Expand Here we report on a 2-50 GHz InAlAs/InGaAs-InP HBT Distributed Amplifier (DA) which demonstrates the highest frequency of… Expand A 2-32 GHz InAlAs-InGaAs-InP HBT CPW distributed amplifier (DA) has been demonstrated which benchmarks the highest bandwidth… Expand