HBT cpd
National Institutes of Health
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【はじめに】InP 系電子デバイスは、高い飽和電子速度を活かした広帯域動作が可能であるが、材 料のバンドギャップによって耐圧が律則される。一方 GaN…
Estrogen and progesterone are key regulators of normal breast epithelial cell proliferation and differentiation. They are also…
Current microwave systems are constructed by integrating a large number of single technology components into a final product due…
The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure…
Vitesse has developed an indium phosphide (InP) heterojunction bipolar transistor (HBT) process and used that process for the…
This paper describes the first InAlAs/InGaAs-InP HBT MMIC power amplifier results reported for frequencies above 20 GHz. The MMIC…
Here we report on a 2-50 GHz InAlAs/InGaAs-InP HBT Distributed Amplifier (DA) which demonstrates the highest frequency of…
A 2-32 GHz InAlAs-InGaAs-InP HBT CPW distributed amplifier (DA) has been demonstrated which benchmarks the highest bandwidth…
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