Reduction of Turn-on, Knee, and Offset Voltages of InAlGaP/GaAs HBTs Using $\delta$-Doping in the InAlGaP Emitter

Abstract

In0.5(Al0.3Ga0.7)0.5P/GaAs heterojunction bipolar transistors (HBTs) are demonstrated as an alternative to AlGaAs/GaAs and InGaP/GaAs HBTs for microwave applications. The effects of δ -doping in the InAlGaP emitter on both electron transport and transistor performance are systemically explored. For comparison, a reference HBT with an identical epilayer… (More)

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