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Greater Than or Equal To

Known as: NLT, Not Less Than, Greater than or equal 
A statement about the relative size or order of two objects specifying that either both objects are the same in quantity or measure or value or… 
National Institutes of Health

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Greater ThanLess ThanNational Health Interview Survey

Papers overview

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Highly Cited
2004
Highly Cited
2004
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2… 
Highly Cited
2002
Highly Cited
2002
Measurement of the effect of self-heating in strained-silicon MOSFETs
The self-heating of strained-silicon MOSFETs is demonstrated experimentally. Output characteristics measured by a pulse technique… 
Highly Cited
2000
Highly Cited
2000
Germanium Nanowire Growth via Simple Vapor Transport
Germanium nanowires are synthesized in bulk quantities and high purity using a simple vapor transport process. X-ray diffraction… 
Highly Cited
1994
Highly Cited
1994
Roughening instability and evolution of the Ge(001) surface during ion sputtering.
We have investigated the temperature-dependent roughening kinetics of Ge surfaces during low energy ion sputtering using energy… 
Highly Cited
1991
Highly Cited
1991
Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
The authors demonstrate the feasibility of a p-channel quantum-well MOSFET on a Ge/sub x/Si/sub 1-x//Si heterostructure. The… 
Highly Cited
1990
Highly Cited
1990
Microstructure and strain relief of Ge films grown layer by layer on Si(001).
We have studied the microstructure of Ge films grown layer by layer on Si(001) surfaces. The growth mode was changed from a… 
Highly Cited
1990
Highly Cited
1990
Hole transport theory in pseudomorphic Si1-xGex alloys grown on Si(001) substrates.
The physics of hole transport in pseudomorphic ${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Ge}}_{\mathrm{x… 
Highly Cited
1987
Highly Cited
1987
Structurally induced optical transitions in Ge-Si superlattices.
Par spectroscopie d'electroreflectance, observation de nouvelles transitions vers 0,76, 1,25 et 2,31 eV dans des superreseaux Ge… 
Highly Cited
1985
Highly Cited
1985
Semiconductor cluster beams: One and two color ionization studies of Six and Gex
Supersonic beams of clusters of Si and Ge atoms have been produced by laser vaporization followed by supersonic expansion in a… 
Highly Cited
1985
Highly Cited
1985
Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium.
The tracer-diffusion coefficient for $^{71}\mathrm{Ge}$ has been measured in Ge single crystals as a function of pressure… 
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