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Glucose^4H dwell specimen:SCnc:Pt:Dial fld prt:Qn

Known as: Glucose [Moles/volume] in Peritoneal dialysis fluid --4 hour dwell specimen, Glukoz^4Sa beklemi? hasta örne?i:SubKons:Zml?:Diyal sv prt:Kant, Glucose 4H dwell spec DiafP-sCnc 
National Institutes of Health

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Chemical procedureDialysis SolutionsGlucosePeritoneal dialysis solution (product)

Papers overview

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2020
2020
Photoinduced charge accumulation and prolonged multielectron storage for the separation of light and dark reaction.
The utilization of solar energy is restricted by the intermittent nature of solar influx. We present novel noble-metal free… 
2017
2017
Aegle marmelos in heterocyclization: greener, highly efficient, one-pot three-component protocol for the synthesis of highly functionalized 4H-benzochromenes and 4H-chromenes
A facile, one-pot three-component protocol for the synthesis of 2-amino-4H-chromene derivatives has been demonstrated using Bael… 
Highly Cited
2012
Highly Cited
2012
New D-π-A-conjugated organic sensitizers based on 4H-pyran-4-ylidene donors for highly efficient dye-sensitized solar cells.
We have synthesized a series of four new promising D-π-A conjugated organic sensitizers with a proaromatic 4H-pyran-4-ylidene as… 
2010
2010
Microwave-assisted three-component coupling-addition-S(N)Ar (CASNAR) sequences to annelated 4H-thiopyran-4-ones.
A whole family of annelated 4H-thiopyran-4-ones as the core structural unit was readily synthesized in good yields by a microwave… 
2008
2008
Theoretical and Experimental Analyses of Safe Operating Area (SOA) of 1200-V 4H-SiC BJT
The safe operating area (SOA) of 1200-V SiC bipolar junction transistor (BJT) is investigated by experiments and simulations. The… 
Highly Cited
2008
Highly Cited
2008
Facile construction of functionalized 4H-chromene via tandem benzylation and cyclization.
A series of functionalized 4H-chromenes have been constructed by using a novel FeCl(3)-catalyzed benzylation-cyclization tandem… 
2007
2007
Improved Electronic Performance of $\hbox{HfO}_{2}/ \hbox{SiO}_{2}$ Stacking Gate Dielectric on 4H SiC
The MOS characteristics of an atomic layer-deposited HfO2/N2O-nitrided SiO2 stacking gate dielectric on n-type 4H SiC (0001) has… 
Review
2006
Review
2006
Silicon carbide and diamond for high temperature device applications
The physical and chemical properties of wide bandgap semiconductors silicon carbide and diamond make these materials an ideal… 
Highly Cited
2005
Highly Cited
2005
1000-V, 30-A 4H-SiC BJTs with high current gain
This paper presents the development of 1000 V, 30A bipolar junction transistor (BJT) with high dc current gain in 4H-SiC. BJT… 
2001
2001
Turn-off and short circuit behaviour of 4H SiC JFETs
In this paper, the dynamic characteristics of a SiC switching power device are described. The switch is realised as a cascode… 
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