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Glucose^4H dwell specimen:SCnc:Pt:Dial fld prt:Qn

Known as: Glucose [Moles/volume] in Peritoneal dialysis fluid --4 hour dwell specimen, Glukoz^4Sa beklemi? hasta örne?i:SubKons:Zml?:Diyal sv prt:Kant, Glucose 4H dwell spec DiafP-sCnc 
 
National Institutes of Health

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Highly Cited
2015
Highly Cited
2015
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics… Expand
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Highly Cited
2011
Highly Cited
2011
The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change… Expand
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Highly Cited
2009
Highly Cited
2009
We present X-ray photoelectron spectroscopy, van der Pauw Hall mobilities, low-temperature far-infrared magneto transmission (FIR… Expand
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2008
2008
The safe operating area (SOA) of 1200-V SiC bipolar junction transistor (BJT) is investigated by experiments and simulations. The… Expand
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Highly Cited
2008
Highly Cited
2008
A series of functionalized 4H-chromenes have been constructed by using a novel FeCl(3)-catalyzed benzylation-cyclization tandem… Expand
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Highly Cited
2005
Highly Cited
2005
This paper presents the development of 1000 V, 30A bipolar junction transistor (BJT) with high dc current gain in 4H-SiC. BJT… Expand
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Highly Cited
2005
Highly Cited
2005
This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain /spl beta… Expand
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2004
2004
The basal surfaces of hexagonal SiC exhibit a large variety of surface reconstructions that develop under a similarly rich… Expand
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2001
2001
In this paper, the dynamic characteristics of a SiC switching power device are described. The switch is realised as a cascode… Expand
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1995
1995
  • Lambrecht, Segall
  • Physical review. B, Condensed matter
  • 1995
  • Corpus ID: 12798439
The band structures of 6H SiC and 4H SiC calculated by means of the full-potential linear-muffin-tin-orbital method are used to… Expand
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