Turn-off and short circuit behaviour of 4H SiC JFETs

In this paper, the dynamic characteristics of a SiC switching power device are described. The switch is realised as a cascode configuration, consisting of the series connection of a low voltage Si MOSFET and a high voltage SiC JFET. This switch is able to operate both as switch and as freewheeling diode. Turn-off behaviour of this switch is reported… (More)