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Germanium

Known as: Germanium [Chemical/Ingredient], germanium (Ge), Germanium Metallicum 
A rare metal element with a blue-gray appearance and atomic symbol Ge, atomic number 32, and atomic weight 72.63.
National Institutes of Health

Related topics

Related topics

18 relations
CALCIUM 0.99 ORAL TABLET [HANTAI 8030 Ca-D3 GOLD]Germanium:MCnc:Pt:Bld:QnGermanium:MCnc:Pt:RBC:QnGermanium:MCnc:Pt:Urine:Qn

Broader (1)

Metals, Heavy

Narrower (6)

barium gallogermanate glassbarium metagermanatebismuth germanium oxidegamma-keggin-6-charged germanodecatungstate

Papers overview

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Highly Cited
2013
Highly Cited
2013
High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation
An ultrathin equivalent oxide thickness (EOT) HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/Ge gate stack has been fabricated by… 
Highly Cited
2004
Highly Cited
2004
Nonvolatile memory based on solid electrolytes
Programmable metallization cell (PMC) memory utilizes electrochemical control of nanoscale quantities of metal in thin films of… 
Highly Cited
2001
Highly Cited
2001
Ge self-diffusion in epitaxial Si(1)-(x)Ge(x) layers.
Diffusion coefficients and activation energies have been determined for Ge diffusion in strain-relaxed Si(1)-(x)Ge(x) with x = 0… 
Highly Cited
2000
Highly Cited
2000
Germanium Nanowire Growth via Simple Vapor Transport
Germanium nanowires are synthesized in bulk quantities and high purity using a simple vapor transport process. X-ray diffraction… 
Highly Cited
1994
Highly Cited
1994
SILICON:GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS: FROM EXPERIMENT TO TECHNOLOGY
Recent advances in thin film growth techniques, notably the maturation of low temperature silicon epitaxy, have enabled the… 
Highly Cited
1994
Highly Cited
1994
Spectroscopy of Dy(3+) in Ge-Ga-S glass and its suitability for 1.3-microm fiber-optical amplifier applications.
Absorption and emission spectra, along with lifetime measurements, of Dy(3+) in Ge-Ga-S glasses are reported. Fluorescence is… 
Highly Cited
1992
Highly Cited
1992
Load and Velocity of Contraction Influence Gross and Delta Mechanical Efficiency
The effects of three different cadences and five different work rates on Gross (GE) and Delta Efficiency (DE) during cycle… 
Highly Cited
1992
Highly Cited
1992
Direct measurement of diffusion by hot tunneling microscopy: Activation energy, anisotropy, and long jumps.
We measure the activation energy for surface diffusion of isolated Pb adatoms on Ge(111) by observing individual atomic… 
Highly Cited
1991
Highly Cited
1991
Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells.
We report the luminescence from excitons confined in fully strained SiGe quantum wells. At liquid-He temperatures the… 
Highly Cited
1989
Highly Cited
1989
Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing
Si/Si/sub 1-x/Ge/sub x/ heterojunction transistors (HBTs) fabricated by a chemical vapor deposition (CVD) technique are reported… 
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