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Germanium

Known as: Germanium [Chemical/Ingredient], germanium (Ge), Germanium Metallicum 
A rare metal element with a blue-gray appearance and atomic symbol Ge, atomic number 32, and atomic weight 72.63.
National Institutes of Health

Related topics

Related topics

18 relations
CALCIUM 0.99 ORAL TABLET [HANTAI 8030 Ca-D3 GOLD]Germanium:MCnc:Pt:Bld:QnGermanium:MCnc:Pt:RBC:QnGermanium:MCnc:Pt:Urine:Qn

Broader (1)

Metals, Heavy

Narrower (6)

barium gallogermanate glassbarium metagermanatebismuth germanium oxidegamma-keggin-6-charged germanodecatungstate

Papers overview

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Highly Cited
2006
Highly Cited
2006
Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition
One of the main requirements for Si-based ultrasmall devices is atomic-order control of process technology. Here we show the… 
Highly Cited
2004
Highly Cited
2004
Nonvolatile memory based on solid electrolytes
Programmable metallization cell (PMC) memory utilizes electrochemical control of nanoscale quantities of metal in thin films of… 
Highly Cited
2002
Highly Cited
2002
Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate
Coherent Ge quantum dots embedded in Si spacing layers were grown on Si substrate by molecular-beam epitaxy in the Stranski… 
Highly Cited
1994
Highly Cited
1994
SILICON:GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS: FROM EXPERIMENT TO TECHNOLOGY
Recent advances in thin film growth techniques, notably the maturation of low temperature silicon epitaxy, have enabled the… 
Highly Cited
1993
Highly Cited
1993
Boron diffusion in strained Si1-xGex epitaxial layers.
B diffusion in Si 1-x Ge x strained layers on Si was studied 'as a function of annealing temperature and Ge content and is shown… 
Highly Cited
1991
Highly Cited
1991
Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells.
We report the luminescence from excitons confined in fully strained SiGe quantum wells. At liquid-He temperatures the… 
Highly Cited
1991
Highly Cited
1991
Strain relaxation during the initial stages of growth in Ge/Si(001).
Grazing-incidence x-ray diffraction has been utilized to give a direct measure of the lateral strain distribution during in situ… 
Highly Cited
1990
Highly Cited
1990
Atomic structure of Si and Ge surfaces: Models for (113), (115), and stepped (001) vicinal surfaces.
  • Ranke
  • Physical Review B (Condensed Matter)
  • 1990
  • Corpus ID: 34081543
A new class of structure models for the (113) and (115) orientations of Si and Ge is proposed. They are based on dimer and adatom… 
Highly Cited
1987
Highly Cited
1987
Ferroelectric transition in Pb1-xGexTe: Extended x-ray-absorption fine-structure investigation of the Ge and Pb sites.
Extended x-ray-absorption fine-structure measurements have been made on the Ge and Pb edges of ferroelectric Pb/sub 1-//sub x/Ge… 
Highly Cited
1975
Highly Cited
1975
Astronomical Fourier spectrometer.
A high resolution near ir Fourier spectrometer with the same general design as previously described laboratory instruments has… 
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