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Germanium
Known as:
Germanium [Chemical/Ingredient]
, germanium (Ge)
, Germanium Metallicum
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A rare metal element with a blue-gray appearance and atomic symbol Ge, atomic number 32, and atomic weight 72.63.
National Institutes of Health
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Related topics
Related topics
18 relations
CALCIUM 0.99 ORAL TABLET [HANTAI 8030 Ca-D3 GOLD]
Germanium:MCnc:Pt:Bld:Qn
Germanium:MCnc:Pt:RBC:Qn
Germanium:MCnc:Pt:Urine:Qn
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Broader (1)
Metals, Heavy
Narrower (6)
barium gallogermanate glass
barium metagermanate
bismuth germanium oxide
gamma-keggin-6-charged germanodecatungstate
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2007
Highly Cited
2007
Intrinsic ferromagnetism versus phase segregation in Mn-doped Ge
E. Biegger
,
Lorenz Stäheli
,
M. Fonin
,
U. Rüdiger
,
Y. Dedkov
2007
Corpus ID: 10800117
We report on a detailed study of structural, magnetic, and electronic properties of MnxGe1−x single crystals (0<x<0.1) prepared…
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Highly Cited
2000
Highly Cited
2000
Germanium/carbon core–sheath nanostructures
Yiying Wu
,
Peidong Yang
2000
Corpus ID: 2860191
Germanium/carbon core–sheath nanostructures and junctions are produced when Ge nanowires are subject to a thermal treatment in an…
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1996
1996
Diffusion of ion implanted boron in preamorphized silicon
K. Jones
,
L. H. Zhang
,
+5 authors
R. Elliman
1996
Corpus ID: 904500
Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry…
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Highly Cited
1994
Highly Cited
1994
Novel low‐resistance ohmic contact to n‐type GaAs using Cu3Ge
M. O. Aboelfotoh
,
C. Lin
,
J. Woodall
1994
Corpus ID: 121231207
We show that e1‐Cu3Ge forms a low‐resistance ohmic contact to n‐type GaAs. The e1‐Cu3Ge contact exhibits a planar and abrupt…
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Highly Cited
1993
Highly Cited
1993
Resonant Raman study of phonon states in gas-evaporated Ge small particles.
Sasaki
,
Horie
Physical Review B (Condensed Matter)
1993
Corpus ID: 29541885
We have studied phonon states of Ge small particles by Raman scattering resonating with the ${\mathit{E}}_{1}$\ensuremath{\sim…
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Highly Cited
1991
Highly Cited
1991
Experimental study of diffusion and segregation in a Si-(GexSi1-x) heterostructure.
Hussein Sm
,
Ahlgren Dc
,
Ronsheim Pa
,
J. O. Chu
Physical Review Letters
1991
Corpus ID: 28243572
Experimental results have been obtained on the segregation coefficients of boron, phosphorus, and arsenic in the Si-(Ge x Si 1-x…
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Highly Cited
1991
Highly Cited
1991
Diffusion and solubility of copper, silver, and gold in germanium.
H. Bracht
,
N. Stolwijk
,
H. Mehrer
Physical Review B (Condensed Matter)
1991
Corpus ID: 44530674
Mesure des profils de diffusion par une technique de resistance d'etalement dans des cristaux de Ge ayant differentes densites de…
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Highly Cited
1990
Highly Cited
1990
Atomic structure of Si and Ge surfaces: Models for (113), (115), and stepped (001) vicinal surfaces.
Ranke
Physical Review B (Condensed Matter)
1990
Corpus ID: 34081543
A new class of structure models for the (113) and (115) orientations of Si and Ge is proposed. They are based on dimer and adatom…
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Highly Cited
1990
Highly Cited
1990
Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipole.
Muoz
,
Chetty
,
Mártin
Physical Review B (Condensed Matter)
1990
Corpus ID: 8403733
We have carried out ab initio self-consistent calculations to investigate the extent to which the band offset can be modified by…
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Highly Cited
1969
Highly Cited
1969
Circuits for High Efficiency Avalanche Diode Oscillators
W. Evans
1969
Corpus ID: 14076790
This paper describes and analyzes the circuits which have been used successfully for TRAPATT oscillator studies. The results lead…
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