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Field effect (semiconductor)
Known as:
Field effect
In physics, the field effect refers to the modulation of the electrical conductivity of a material by the application of an external electric field…
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Related topics
Related topics
3 relations
Band bending
Electron hole
Semiconductor
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2010
Highly Cited
2010
A Thieno[3,4-c]pyrrole-4,6-dione-Based Donor-Acceptor Polymer Exhibiting High Crystallinity for Photovoltaic Applications
Mao-Chuan Yuan
,
Mao-Yuan Chiu
,
Shihuan Liu
,
Chia-Min Chen
,
K. Wei
2010
Corpus ID: 96263822
Polymer solar cells (PSCs) based on bulk heterojunction (BHJ) structures that consist of polymeric donors and fullerene-based…
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Highly Cited
2008
Highly Cited
2008
Organic bulk heterojunction solar cells using poly(2,5-bis(3-tetradecyllthiophen-2-yl)thieno[3,2,-b]thiophene)
Jack E. Parmer
,
A. Mayer
,
+4 authors
I. McCulloch
2008
Corpus ID: 14906101
By transitioning to semicrystalline polymers, the performance of polymer-based solar cells has recently increased to over 5% [W…
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Highly Cited
2006
Highly Cited
2006
Cooperative effects and dipole formation at semiconductor and self-assembled-monolayer interfaces
A. Natan
,
Yigal Zidon
,
Y. Shapira
,
L. Kronik
2006
Corpus ID: 120575346
Dipole formation processes at self-assembled monolayers of benzene derivatives chemisorbed on the Si(111) surface are…
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Highly Cited
2004
Highly Cited
2004
High inversion current in silicon nanowire field effect transistors
S. Koo
,
A. Fujiwara
,
Jinhua Han
,
E. Vogel
,
C. Richter
,
J. Bonevich
2004
Corpus ID: 55263936
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional…
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Highly Cited
2004
Highly Cited
2004
Controlled Growth of Y-Junction Nanotubes Using Ti-Doped Vapor Catalyst
N. Gothard
,
C. Daraio
,
J. Gaillard
,
R. Zidan
,
S. Jin
,
A. Rao
2004
Corpus ID: 30232676
We demonstrate a bulk process for the synthesis of Y-junction carbon nanotubes using Ti-doped Fe catalysts. It is shown that the…
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Highly Cited
2000
Highly Cited
2000
Synthesis of Large Areas of Highly Oriented, Very Long Silicon Nanowires
W. Shi
,
H. Peng
,
+5 authors
Shui-Tong Lee
2000
Corpus ID: 53372811
Silicon is one of the most important electronic materials. Its nanoscale forms, such as nanocrystals, porous silicon, quantum…
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Highly Cited
1998
Highly Cited
1998
Transistor records of excitable neurons from rat brain
S. Vassanelli
,
P. Fromherz
1998
Corpus ID: 18401265
Field effect transistors form electrical junctions with excitable nerve cells from rat brain which are cultured on oxidized…
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Highly Cited
1996
Highly Cited
1996
Room temperature operation of Si single-electron memory with self-aligned floating dot gate
Anri Nakajima
,
T. Futatsugi
,
K. Kosemura
,
Tetsu Fukano
,
Naoki Yokoyama
International Electron Devices Meeting. Technical…
1996
Corpus ID: 41650031
Reports on a new Si single-electron memory device comprised of a narrow channel field effect transistor (FET) having an ultra…
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Highly Cited
1994
Highly Cited
1994
Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °C
T. Kaneko
,
M. Wakagi
,
K. Onisawa
,
T. Minemura
1994
Corpus ID: 59428812
Polycrystalline silicon films have been deposited on glass substrates at 350 °C by radio‐frequency plasma‐enhanced chemical vapor…
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Highly Cited
1986
Highly Cited
1986
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
T. Henderson
,
M. I. Aksun
,
+5 authors
Luke F. Lester
IEEE Electron Device Letters
1986
Corpus ID: 19034994
We report excellent dc and millimeter-wave performance in In0.15Ga0.85As/Al0.15Ga0.85As pseudomorphic modulation-doped field…
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