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Electrical connection
Known as:
Connection
An electrical connection between discrete points allows the flow of electrons (electric current). A pair of connections is needed for a circuit…
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15 relations
Acoustic coupler
Circuit diagram
Electrical connector
Hot Interconnects
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2009
Highly Cited
2009
Nanowire Photonics Nanowire Growth
Ruoxue Yan
,
D. Gargas
,
P. Yang
2009
Corpus ID: 8169389
Photonics involves the control of photons in free space or in matter. Manipulation of photons in semiconductor bulk crystals and…
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Highly Cited
2005
Highly Cited
2005
Monolayer metallic nanotube interconnects: promising candidates for short local interconnects
A. Naeemi
,
J. Meindl
IEEE Electron Device Letters
2005
Corpus ID: 27109604
Mono- or bi-layer metallic single-wall carbon nanotube interconnects have lateral capacitances more than four times smaller than…
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Review
2002
Review
2002
Sensors from electrodeposited metal nanowires
E. Walter
,
R. Penner
,
H. Liu
,
K. Ng
,
M. Zach
,
F. Favier
2002
Corpus ID: 55355119
Based on their electronic conductivity behaviour, metallic nanowires may have analytical applications ranging from interconnects…
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Highly Cited
1997
Highly Cited
1997
A high performance 1.8 V, 0.20 /spl mu/m CMOS technology with copper metallization
S. Venkatesan
,
A. Gelatos
,
+35 authors
Y. Yu
International Electron Devices Meeting. IEDM…
1997
Corpus ID: 6771412
A high performance 0.20 /spl mu/m logic technology has been developed with six levels of planarized copper interconnects. 0.15…
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Review
1994
Review
1994
Free-space digital optical systems
H. S. Hinton
,
T. Cloonan
,
F. Mccormick
,
A. Lentine
,
F. Tooley
Proceedings of the IEEE
1994
Corpus ID: 61989726
Within the past 15 years there has been significant progress in the development of two-dimensional arrays of optical and…
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Highly Cited
1993
Highly Cited
1993
Electromigration characteristics of copper interconnects
Jiang Tao
,
Nathan W. Cheung
,
Chenming Hu
IEEE Electron Device Letters
1993
Corpus ID: 45925851
The electromigration characteristics of electroless plated copper interconnects have been investigated under DC and time-varying…
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Highly Cited
1987
Highly Cited
1987
Superconductors as very high-speed system-level interconnects
O. Kwon
,
B. W. Langley
,
R. F. Pease
,
Malcolm Beasley
IEEE Electron Device Letters
1987
Corpus ID: 10593427
The anticipated propagation characteristics at 77 K of superconducting transmission lines using the new high critical temperature…
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Highly Cited
1985
Highly Cited
1985
Stress Induced Voids in Aluminum Interconnects During IC Processing
J. Yue
,
W.P. Funsten
,
R.V. Taylor
IEEE International Reliability Physics Symposium
1985
Corpus ID: 23982848
Voids in the aluminum metallization of integrated circuits can be created under certain device fabrication conditions. The…
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Highly Cited
1982
Highly Cited
1982
Titanium disilicide self-aligned source/drain + gate technology
C. K. Lau
,
Y. See
,
D. Scott
,
J. M. Bridges
,
S.M. Perna
,
R. Davies
International Electron Devices Meeting
1982
Corpus ID: 6493087
Silicides have been used to lower the resistance of gate level interconnects. Recently silicidation of source/drain diffusions…
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Review
1980
Review
1980
Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects
S. Murarka
,
D. Fraser
,
A. K. Sinha
,
H. Levinstein
IEEE Journal of Solid-State Circuits
1980
Corpus ID: 47390358
A study of the refractory-gate metallization schemes had been undertaken to provide a low-resistivity metallization for LSI and…
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