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EKV MOSFET model

The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation… Expand
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Papers overview

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2018
2018
  • Gui-Jia Su
  • IEEE Vehicle Power and Propulsion Conference…
  • 2018
  • Corpus ID: 57762709
The reverse-conduction capability of SiC MOSFETs can be used to further reduce inverter losses and increase efficiency. This… Expand
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2017
2017
This article presents the s implified charge-based Enz-Krummenacher-Vittoz (EKV) [11] metal-oxide-semiconductor field-effect… Expand
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2015
2015
? Users may download and print one copy of any publication from the public portal for the purpose of private study or research… Expand
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2014
2014
SiC MOSFET can switch five to ten times faster compared to state of the art Si IGBT. Due to that SiC MOSFET based power converter… Expand
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Highly Cited
2014
Highly Cited
2014
SiC MOSFET devices have great potentials in future high temperature power electronics applications due to their possible higher… Expand
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2014
2014
Reverse recovery behavior is a useful tool for monitoring lifetime variations in the body diode of power MOSFETs. However… Expand
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2012
2012
Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching… Expand
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Highly Cited
2008
Highly Cited
2008
A quantitative evaluation of the contributions of different sources of statistical variability, including the contribution from… Expand
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Highly Cited
2005
Highly Cited
2005
Reference NANOLAB-CONF-2005-019View record in Web of Science Record created on 2007-05-16, modified on 2017-05-10 
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Highly Cited
1998