EKV MOSFET model

The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation… (More)
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2017
2017
This article presents the s implified charge-based Enz-Krummenacher-Vittoz (EKV) [11] metal-oxide-semiconductor field-effect… (More)
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2016
2016
The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future… (More)
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2014
2014
SiC MOSFET can switch five to ten times faster compared to state of the art Si IGBT. Due to that SiC MOSFET based power converter… (More)
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2014
2014
SiC MOSFET devices have great potentials in future high temperature power electronics applications due to their possible higher… (More)
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2010
2010
Transconductance gm is an important parameter for small-signal analysis of analog circuits. It is paramount to analyse the gm and… (More)
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2008
2008
The present paper presents a straightforward yet effective approach to implementing a MOS transistor compact model (EKV v.2.6) in… (More)
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2008
2008
A quantitative evaluation of the contributions of different sources of statistical variability, including the contribution from… (More)
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Highly Cited
2005
Highly Cited
2005
Introduction This paper addresses the possible future convergence of silicon CMOS and MEMS technologies in terms of new… (More)
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1998
1998
Motivation: analog and mixed analog-digital circuit design: 
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