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EKV MOSFET model

The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation… 
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CMOSMathematical modelSPICE 2

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Electronic engineering

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Loss Modeling for SiC MOSFET Inverters
The reverse-conduction capability of SiC MOSFETs can be used to further reduce inverter losses and increase efficiency. This… 
2017
2017
Impact of gate control on short-circuit capability of SiC/Si based hybrid switch
Although the hybrid switch consisting of high power Si IGBT and low power SiC MOSFET achieves reduction of losses and cost, there… 
2016
2016
Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss
A silicon carbide split-gate MOSFET (SG-MOSFET) is proposed in this paper, which features a Schottky barrier diode embedded above… 
2015
2015
Comparison performance of Si-IGBT and SiC-MOSFET used for high efficiency inverter of contactless power transfer system
This paper deals with investigation on electrical characteristics of both conventional Si-IGBT and next generation power… 
2013
2013
Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets
4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by… 
2013
2013
Design of DC-side wiring structure for high-speed switching operation using SiC power devices
In power electronics circuits, the stray inductance of a bus bar between a DC capacitor and power devices may affect an… 
2012
2012
Characteristics of the Power Electronics Equipments applying the SiC power devices
Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching… 
2011
2011
Analytical model of threshold voltage and sub-threshold slope of SOI and SON MOSFET: A comparative study
Athreshold voltagemodel based on three-interface compact capacitivemodel is developed for horizontal SOI/SONMOSFET. Different… 
Review
2004
Review
2004
A process/physics-based compact model for nonclassical CMOS device and circuit design
1998
1998
The EKV MOSFET Model for Circuit Simulation
A signal-processing circuit has the first reference-voltage setting circuit for setting a lower-limit reference voltage and an… 
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