# EKV MOSFET model

## Papers overview

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2017

2017

- IEEE Solid-State Circuits Magazine
- 2017

This article presents the s implified charge-based Enz-Krummenacher-Vittoz (EKV) [11] metal-oxide-semiconductor field-effectâ€¦Â (More)

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2016

2016

- 28th International Symposium on Powerâ€¦
- 2016

The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of futureâ€¦Â (More)

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2014

2014

- IEEE International Conference on Powerâ€¦
- 2014

SiC MOSFET can switch five to ten times faster compared to state of the art Si IGBT. Due to that SiC MOSFET based power converterâ€¦Â (More)

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2014

2014

- IEEE Transactions on Power Electronics
- 2014

SiC MOSFET devices have great potentials in future high temperature power electronics applications due to their possible higherâ€¦Â (More)

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2010

2010

- Proceedings of the 17th International Conferenceâ€¦
- 2010

Transconductance gm is an important parameter for small-signal analysis of analog circuits. It is paramount to analyse the gm andâ€¦Â (More)

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2008

2008

- 26th International Conference on Microelectronics
- 2008

The present paper presents a straightforward yet effective approach to implementing a MOS transistor compact model (EKV v.2.6) inâ€¦Â (More)

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2008

2008

Quantitative Evaluation of Statistical Variability Sources in a 45-nm Technological Node LP N-MOSFET

- IEEE Electron Device Letters
- 2008

A quantitative evaluation of the contributions of different sources of statistical variability, including the contribution fromâ€¦Â (More)

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Highly Cited

2005

Highly Cited

2005

- IEEE InternationalElectron Devices Meetingâ€¦
- 2005

Introduction This paper addresses the possible future convergence of silicon CMOS and MEMS technologies in terms of newâ€¦Â (More)

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Highly Cited

1999

Highly Cited

1999

- 1999

1.Â

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1998

1998

- 1998

Motivation: analog and mixed analog-digital circuit design:Â

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