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Drain Specimen Code

Known as: Drain 
National Institutes of Health

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3 relations
Drain - SpecimenTypeDrain deviceDrainage procedure

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Review
2017
Review
2017
Student Global Mobility: An Analysis of International STEM Student Brain Drain.
STUDENT GLOBAL MOBILITY: AN ANALYSIS OF INTERNATIONAL STEM STUDENT BRAIN DRAIN Margaret E. Gesing Old Dominion University, 2017… 
2015
2015
Investigation of III–V compound semiconductor materials on analog performance of Nanoscale RingFET
In present work, the impact of channel material engineering and gate oxide engineering on the RingFET architecture has been… 
2011
2011
An Insight Into the ESD Behavior of the Nanometer-Scale Drain-Extended NMOS Device—Part I: Turn-On Behavior of the Parasitic Bipolar
A second-breakdown phenomenon (It2) in a drain-extended n-type metal-oxide-semiconductor (DENMOS) is associated with complex… 
2011
2011
Systematic understanding of self-heating effects in tri-gate nanowire MOSFETs considering device geometry and carrier transport
Self-heating effects (SHE) in nanowire transistors (NW Tr.) have been systematically studied with respect to the dependence on… 
2011
2011
Temperature Dependence of Drain Currents of Thin-Film Transistor with Very Thin SiN_x Film Formed at Source and Drain Region
2009
2009
Drain / substrate coupling impact on DIBL of Ultra Thin Body and BOX SOI MOSFETs with undoped channel
For ultimate MOSFET scaling, Ultra Thin Body and BOX SOI transistors have become of great interest, as they are known to… 
2009
2009
Reliability Tradeoffs and Scaling Issues of Read Drain Bias in nor Flash Memory
Drain read disturb (DRD) is becoming an intrinsic reliability concern for NOR flash scaling and multilevel cell operation. There… 
2008
2008
Drain Read Disturb Assessment of NOR Flash Memory
Drain read disturb (RD) is becoming an intrinsic reliability concern for NOR flash scaling and MLC operation. A drain RD time-to… 
2008
2008
A Gate-Induced Drain-Leakage Current Model for Fully Depleted Double-Gate MOSFETs
A gate-induced drain-leakage current model which can avoid the invalidation of 1-D models for fully depleted double-gate MOSFETs… 
2008
2008
Source/Drain Junction Partition in MOS Snapback Modeling for ESD Simulation
An enhancement to the modeling of the ‘snapback’ in MOS transistors for ESD simulation is presented. The new model uses industry… 
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